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US 10,475,637 B2Granted
Semiconductor substrate and manufacturing method thereof
AssigneeGlobalWafers Co., Ltd.
InventorsChun-I Fan, Chih-Yuan Chuang, Ying-Ru Shih, Wen-Ching Hsu
Life of this patent
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Abstract
A semiconductor substrate and a manufacturing method thereof are provided. The semiconductor substrate has an epitaxy region located at a central portion of a main plane of the semiconductor substrate, a periphery region surrounding the epitaxy region and an injured region distributed inside the periphery region.
Claims4
A semiconductor substrate, comprising:
- an epitaxy region, located at a central portion of a main plane of the semiconductor substrate;
- a periphery region, surrounding the epitaxy region;
- and
- an injured region, distributed inside the periphery region;
- wherein the semiconductor substrate is a Si-substrate, an average depth of the injured region is from 17.5 μm to 26.5 μm, and the injured region is a lattice strain region, and
- wherein the main plane of the semiconductor substrate is surrounded by a bevel portion which is manufactured by a deformation process, the bevel portion is located in the periphery region, and the injured region is located in the bevel portion.
3 more elements
A manufacturing method of a semiconductor substrate, comprising:
- providing a semiconductor substrate;
- and
- forming an injured region inside a periphery region of the semiconductor substrate, wherein an average depth of the injured region is from 17.5 μm to 26.5 μm and the injured region is a lattice strain region, wherein a bevel portion manufactured by a deformation process is located in the periphery region, and the injured region is located in the bevel portion, and the step of forming the injured region comprises:
- performing a sandblasting process or a stealth laser process to form the injured region inside the periphery region.
1 more element
Dependencies are inferred from the claim text.