Back to results
US 10,475,583 B2Granted
Dielectric composites, and multi-layered capacitors and electronic devices comprising thereof
AssigneeSamsung Electronics Co., Ltd.
InventorsChan Kwak, Hyun Sik Kim, Jong Wook Roh, Kyoung-Seok Moon, Hyeon Cheol Park, Yoon Chul Son, Daejin Yang, Doh Won Jung, Youngjin Cho
Life of this patent
Estimating the term…
Abstract
A dielectric composite including a plurality of crystal grains including a semiconductor or conductive material, and a grain boundary insulation layer between the crystal grains, wherein the grain boundary insulation layer includes a two-dimensional layered material covering at least a portion of a surface of at least one of the crystal grains, and a multi-layered capacitor and an electronic device including the same.
Claims24
A dielectric composite, comprising:
- a plurality of crystal grains comprising a semiconductor or conductive material, and
- a grain boundary insulation layer between the crystal grains,
- wherein the grain boundary insulation layer comprises a two-dimensional layered material covering at least a portion of a surface of at least one of the crystal grains.
A dielectric composite, comprising:
- a plurality of crystal grains comprising a semiconductor or conductive material, and
- a grain boundary insulation layer between the crystal grains,
- wherein the grain boundary insulation layer comprises a material represented by Chemical Formula 1:
- Xm(A(n-1)B′nO(3n+1)) Chemical Formula 1
- wherein, in Chemical Formula 1, X comprises H, an alkali metal, a cationic compound, or a combination thereof, A comprises Ca, Na, Ta, Bi, Ba, Sr, or a combination thereof, B comprises W, Mo, Cr, Ta, Nb, V, Zr, Hf, Pb, Sn, La, Ti, or a combination thereof, 0≤m≤2, and n≥1, and
- wherein the grain boundary insulation layer has a thickness in a range of about 5 nanometers to about 99 nanometers.
3 more elements
Dependencies are inferred from the claim text.