In-situ oxidized NiO as electrode surface for high k MIM device

A metal-insulator-metal capacitor, comprising:

• a bottom electrode comprising NiOx wherein 1<x<1.5;
• a high k dielectric material in contact with the bottom electrode, the high k dielectric material comprising a material selected from the group consisting of Al2O3, Ta2O3, Bi—Ta—O, Bi—Nb—O, PbMgNbO3+PbTiO3, PbLaZrTiO3, BaSrTiO3, (Ba,Sr)Ti4O9, Ti—Zr—Sn—O, Ta2O5, lanthanide-(Ta,Nb)—O, Al—Ta—O, HfO2, ZrO2, doped HfO2, and doped ZrO2;
• a top electrode comprising NiOx in contact with the high k dielectric material, wherein 1<x<1.5;
• and
• a protective cap overlying and in direct contact with the top electrode, wherein the protective cap is a vapor deposition layer that protects the capacitor from deoxygenation or adverse processing effects incident to gas anneals.

A method of forming a high dielectric constant metal-insulator structure, comprising:

• forming one of an electrode and a high k dielectric material, the high k dielectric material comprising a material selected from the group consisting of Al2O3, Ta2O3, Bi—Ta—O, Bi—Nb—O, PbMgNbO3+PbTiO3, PbLaZrTiO3, BaSrTiO3, (Ba,Sr)Ti4O9, Ti—Zr—Sn—O, Ta2O5, lanthanide-(Ta,Nb)—O, Al—Ta—O, HfO2, ZrO2, doped HfO2, and doped ZrO2;
• depositing thereon the other of said electrode and high k dielectric material, to form a high dielectric constant metal-insulator structure, wherein the electrode comprises NiOx wherein 1<x<1.5;
• forming a second electrode, in contact with said high k dielectric material, wherein the electrodes comprise a bottom electrode and a top electrode, and
• depositing a protective capping layer, in direct contact with the top electrode, wherein the protective cap is a vapor deposition layer that protects the high dielectric constant metal-insulator structure from deoxygenation or adverse processing effects incident to gas anneals.