Operation method of resistive random access memory and resistive random access memory device

A resistance random access memory apparatus, comprising a resistance random access memory array, a control module and a test module, wherein

• the control module controls the test module to apply a reset voltage to a storage unit of the resistance random access memory array;
• and
• the control module acquires a resistance value of the storage unit, compares the acquired resistance value of the storage unit with a preset target resistance value in a high resistance state, and carries out the following steps according to a comparison result:
• if the resistance value of the storage unit is less than the preset target resistance value in the high resistance state, the control module controls the test module to apply a set voltage to the storage unit so as to set the storage unit to a preset target resistance value in a low resistance state;
• the control module controls the test module to apply the reset voltage of which an amount is increased to the storage unit;
• and the control module and the test module repeat the step of acquiring the resistance value of the storage unit and the subsequent steps until the resistance value of the storage unit is greater than or equal to the preset target resistance value in the high resistance state;
• and
• if the resistance value of the storage unit is greater than or equal to the preset target resistance value in the high resistance state, the control module controls the test module to stop applying the reset voltage to the storage unit.

An operation method of a resistance random access memory, the method comprising:

• applying an initial reset voltage to a storage unit of a resistance random access memory array;
• carrying out a read check operation to acquire a resistance value of the storage unit;
• determining that the resistance value of the storage unit is either less than, or higher than or equal to a preset target resistance value in a high resistance state;
• responsive to determining that the resistance value of the storage unit is higher than or equal to the preset target resistance value in the high resistance state, terminating the operation of the resistance random access memory;
• and
• responsive to determining that the resistance value of the storage unit is less than the preset target resistance value in the high resistance state,
• applying a set voltage to the storage unit to set the storage unit to a preset target resistance value in a low resistance state,
• updating the reset voltage applied to the storage unit, wherein a magnitude of the updated reset voltage is higher than that of the initial reset voltage, and
• repeating (i) the read check operation, and (ii) determining whether the resistance value of the storage unit has reached the preset target resistance value in the high resistance state until the storage unit reaches the preset target resistance value in the high resistance state,
• wherein an amount V2 of the set voltage is applied to the storage unit and an amount V1 of the reset voltage is applied to the storage unit before application of the set voltage with the amount V2, and wherein:
• −0.4≤V2−V1≤0.