Method for managing the endurance of a non-volatile rewritable memory and device for programming such a memory

A method for managing the endurance of a non-volatile rewritable memory including a plurality of ordered stacks of a lower electrode, a layer of dielectric material and an upper electrode, the dielectric material of each stack being capable of switching between:

• a high resistance state, in which said dielectric material has a first resistance value, and
• a low resistance state, in which said dielectric material has a second resistance value, a switching between the high resistance state and the low resistance state allowing a writing in the memory and a switching between the low resistance state and the high resistance state allowing an erasure in the memory,
• the method comprising at least one of the following operations:
• at the end of each erasure operation:
• reading the first resistance value of the dielectric material, comparing said first resistance value with a first predetermined median resistance value, and determining writing programming conditions from the results of said comparison;
• and
• at the end of each writing operation:
• reading the second resistance value of the dielectric material, comparing said second resistance value with a second predetermined median resistance value, and determining erasure programming conditions from the results of said comparison,
• the first and second median resistance values following, respectively, a first and a second predetermined dependency laws, linking respectively the writing and erasure programming conditions and the first and second read resistance values,
• said writing and erasure programming conditions being applied to the electrodes of the stack during, respectively, following writing and erasure operations in order to limit the generation of defects in the dielectric material.