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US 10,475,508 B2Granted
Transient current-protected threshold switching devices systems and methods
AssigneeIntel Corporation
InventorsDavide Mantegazza, Sandeep Guliani, Balaji Srinivasan, Kiran Pangal
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Abstract
Threshold switching devices demonstrating transient current protection through both insulation and repair current mechanisms, including associated systems and methods, are provided and discussed.
Claims21
A memory device, comprising:
- a memory cell comprising:
- a select device (SD) material;
- and
- a phase change memory (PCM) material electrically coupled to the SD material;
- a word line (WL) coupled to the memory cell;
- a bit line (BL) coupled to the memory cell, such that each memory cell is addressed by the combination of the WL and the BL;
- and
- circuitry electrically coupled to the WL and BL, the circuitry configured to:
- select the memory cell to be read by selecting the combination of WL and BL;
- apply a WL read bias voltage (WLV) to the WL;
- uncouple the WL from the WLV to float the WL;
- apply a BL read bias voltage (BLV) to the BL, such that the BLV and the WLV at the floating WL activate the device;
- and
- recouple the WL to the WLV to deliver a repair current to the device.
11 more elements
A method of managing transient current-induced damage in a memory device, comprising:
- selecting a memory device comprising a phase change material having a word line (WL) and a bit line (BL) electrically coupled across the phase change material;
- applying a WL read bias voltage (WLV) to the WL;
- uncoupling the WL from the WLV to float the WL;
- applying a BL read bias voltage (BLV) to the BL, such that the BLV and the WLV at the floating WL activate the device;
- and
- reapplying the WLV to the WL to deliver a repair current to the device.
3 more elements
A memory device, comprising:
- a phase change memory material;
- a word line (WL);
- a bit line (BL) coupled to the WL across the phase change memory material;
- and
- circuitry configured to:
- activate the device by floating the WL and applying a BL read bias voltage (BLV);
- and
- deliver a repair current by recoupling the WL to a WL read bias voltage (WLV).
5 more elements
Dependencies are inferred from the claim text.