Integrated circuits with magnetic tunnel junctions and methods of producing the same
AssigneeGlobalfoundries Singapore Pte. Ltd.
InventorsWai Cheung Law, Taiebeh Tahmasebi, Chim Seng Seet, Kai Hung Alex See, Gerard Joseph Lim, Wen Siang Lew
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Abstract
Integrated circuits and methods of producing the same are provided. In an exemplary embodiment, an integrated circuit includes a magnetic tunnel junction stack. The magnetic tunnel junction stack includes a first free layer that is magnetic, a second free layer that is magnetic, and an insertion layer positioned between the first and second free layers. The insertion layer is non-magnetic, and the insertion layer includes terbium.
Claims9
An integrated circuit comprising a magnetic tunnel junction stack, wherein the magnetic tunnel junction stack comprises:
- a total pinned layer that comprises a first pinned layer that is magnetic;
- a total free layer that comprises a first free layer that is magnetic;
- a tunnel barrier layer positioned between the total pinned layer and the total free layer, wherein the tunnel barrier layer is non-magnetic;
- and
- a transition layer positioned between the total pinned layer and the tunnel barrier layer, wherein the transition layer is non-magnetic, wherein the transition layer comprises terbium at from about 30 to about 100 weight percent, based on a total weight of the transition layer, and wherein the transition layer comprises one or more of iron or cobalt at from about 5 to about 70 weight percent, based on the total weight of the transition layer.
A method of producing an integrated circuit comprising:
- forming a total fixed layer that is magnetic;
- forming a transition layer overlying the total fixed layer, wherein the transition layer is non-magnetic, wherein the transition layer comprises terbium at from about 30 to about 100 weight percent, based on a total weight of the transition layer, and wherein the transition layer comprises one or more of iron or cobalt at from about 5 to about 70 weight percent, based on the total weight of the transition layer;
- forming a tunnel barrier layer overlying the transition layer, wherein the tunnel barrier layer is non-magnetic;
- and
- forming a first free layer overlying the tunnel barrier layer, wherein the first free layer is magnetic.
Dependencies are inferred from the claim text.