Back to results
US 10,475,490 B2Granted
Memory devices with improved refreshing operation
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsYue-Der Chih, Cheng-Hsiung Kuo, Gu-Huan Li, Chien-Yin Liu
Life of this patent
Estimating the term…
Abstract
A memory device includes memory cells and a refresh module. The memory cells are coupled to a bit line, in which at least one memory cell of the memory cells is configured to store predetermined data. The refresh module is configured to refresh the at least one memory cell if a target memory cell of the memory cells is programmed or erased, in order to keep at least one cell current of the at least one memory cell away from a predetermined verify current level.
Claims20
A memory device, comprising:
- a plurality of memory cells coupled to a bit line, wherein at least one memory cell of the plurality of memory cells is configured to store predetermined data;
- and
- a refresh module configured to refresh the at least one memory cell if a target memory cell of the plurality of memory cells is programmed or erased, to keep at least one cell current of the at least one memory cell at a level different from a predetermined verify current level.
A memory device, comprising:
- a plurality of memory cells coupled to a bit line,
- wherein at least one memory cell of the plurality of memory cells is configured to store predetermined data, and the at least one memory cell corresponds to a distribution curve that is associated with a read margin;
- and
- a refresh module configured to refresh the at least one memory cell at least by rewriting the predetermined data to the at least one memory cell, if a target memory cell of the plurality of memory cells is programmed or erased, in order to refrain a width of the distribution curve from expanding.
1 more element
A method, comprising:
- programming or erasing a target memory cell;
- and
- refreshing a memory cell storing predetermined data corresponding to a distribution curve that is associated with a read margin, at least by rewriting the predetermined data to the memory cell, to refrain a width of the distribution curve from expanding,
- wherein the memory cell and the target memory cell are associated with a data line.
1 more element
Dependencies are inferred from the claim text.