Memory device with an input signal management mechanism

A memory device, comprising:

• a set of input pads configured to receive from a source external to the memory device one or more input signals and a chip select signal;
• an operation circuit electrically coupled to the input pads, operation circuit configured to perform operations corresponding to the one or more input signals when the chip select signal is enabled;
• an input management circuit electrically coupled to and between the input pads and the operation circuit, the input management circuit configured to control propagation of the one or more input signals based on the chip select signal, wherein the input management circuit includes:
• an input control gate configured to:
• receive the chip select signal and the one or more input signals,
• block propagation of the one or more input signals when the chip select signal is not enabled, and
• communicate the one or more input signals to the operation circuit when the chip select signal is enabled,
• an input delay buffer electrically coupled to the input control gate, the input delay buffer configured to delay arrival of the one or more input signals at the input control gate;
• and
• an output delay buffer electrically coupled to the input control gate, the output delay buffer configured to sustain the chip select signal at the operation circuit.