Storage element
AssigneeSony Corporation
InventorsKazutaka Yamane, Masanori Hosomi, Hiroyuki Ohmori, Kazuhiro Bessho, Yutaka Higo, Tetsuya Asayama, Hiroyuki Uchida
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Abstract
A storage element is provided. The storage element includes a memory layer; a fixed magnetization layer; an intermediate layer including a non-magnetic material; wherein the intermediate layer is provided between the memory layer and the fixed magnetization layer; wherein the fixed magnetization layer includes at least a first magnetic layer, a second magnetic layer, and a non-magnetic layer, and wherein the first magnetic layer includes a CoFeB composition. A memory apparatus and a magnetic head are also provided.
Claims18
A storage element comprising:
- a layer structure including
- a first layer having a first magnetization state;
- a second layer having a second magnetization state;
- and
- an intermediate layer provided between the first layer and the second layer,
- wherein the second layer includes at least a first magnetic layer, a second magnetic layer, and a non-magnetic layer,
- wherein the first magnetic layer contacts the intermediate layer, and
- wherein the first layer contacts the intermediate layer and has a magnetization substantially perpendicular to a surface of the first layer.
A memory comprising:
- a storage element;
- and
- a first wire and a second wire that intersects the first wire;
- wherein the storage element includes
- a layer structure including
- a first layer having a first magnetization state;
- a second layer having a second magnetization state;
- and
- an intermediate layer provided between the first layer and the second layer,
- wherein the second layer includes at least a first magnetic layer, a second magnetic layer, and a non-magnetic layer,
- wherein the first magnetic layer contacts the intermediate layer, and
- wherein the first layer contacts the intermediate layer and has a magnetization substantially perpendicular to a surface of the first layer.
Dependencies are inferred from the claim text.