Memory management method and storage controller
AssigneeShenzhen EpoStar Electronics Limited CO.
InventorYu-Hua Hsiao
Life of this patent
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Abstract
A memory management method is provided. The method includes selecting a target physical programming unit among a plurality of physical programming units of a rewritable non-volatile memory module; identifying a target storage status and a target read voltage according to a memory type of the rewritable non-volatile memory module; using the target read voltage to read the target physical programming unit to obtain a bit value ratio; and identifying a storage pattern of the target physical programming unit according to the bit value ratio.
Claims10
A memory management method, adapted to a storage device having a rewritable non-volatile memory module, wherein the rewritable non-volatile memory module comprises a plurality of physical programming units, wherein each physical programming unit among the physical programming units has a plurality of memory cells, and the method comprises:
- selecting a target physical programming unit among the physical programming units, wherein the target physical programming unit has a plurality of first memory cells;
- identifying a target storage status according to a memory type of the rewritable non-volatile memory module, and obtaining a target read voltage according to the target storage status and a preset read voltage corresponding to the target storage status;
- using the target read voltage to read the target physical programming unit so as to identify a plurality of second memory cells among the first memory cells, wherein a storage status of the second memory cells is the target storage status, wherein a threshold voltage distribution of the second memory cells is lower than a threshold voltage distribution of a plurality of third memory cells among the first memory cells, wherein a storage status of the third memory cells is different from the target storage status;
- calculating a bit value ratio according to the second memory cells;
- and
- identifying a storage pattern of the target physical programming unit according to the bit value ratio.
A storage controller, configured to control a storage device having a rewritable non-volatile memory module, the storage controller comprising:
- a connection interface circuit, configured to couple to a host system;
- a memory interface control circuit, configured to couple to the rewritable non-volatile memory module, wherein the rewritable non-volatile memory module comprises a plurality of physical programming units, wherein each physical programming unit among the physical programming units has a plurality of memory cells;
- a storage status management circuit unit;
- and
- a processor, coupled to the connection interface circuit, the memory interface control circuit and the storage status management circuit unit,
- wherein the processor selects a target physical programming unit among the physical programming units and instructs the storage status management circuit unit to perform a storage status identifying operation on the target physical programming unit, wherein the target physical programming unit has a plurality of first memory cells,
- in the storage status identifying operation,
- the storage status management circuit unit is configured to identify a target storage status according to a memory type of the rewritable non-volatile memory module and obtain a target read voltage according to the target storage status and a preset read voltage corresponding to the target storage status;
- the storage status management circuit unit is further configured to use the target read voltage to read the target physical programming unit so as to identify a plurality of second memory cells among the first memory cells, wherein a storage status of the second memory cells is the target storage status, wherein a threshold voltage distribution of the second memory cells is lower than a threshold voltage distribution of a plurality of third memory cells among the first memory cells, wherein a storage status of the third memory cells is different from the target storage status;
- the storage status management circuit unit is further configured to calculate a bit value ratio according to the second memory cells;
- and
- the storage status management circuit unit is further configured to identify a storage pattern of the target physical programming unit according to the bit value ratio.
Dependencies are inferred from the claim text.