Touch screen-integrated display device and method for fabricating the same

A method for fabricating a touch screen-integrated display device, the method comprising:

• forming a gate electrode on a substrate using a first mask process;
• forming a gate insulator over the gate electrode using a second mask process;
• forming a semiconductor layer and an electrode metal layer on the gate insulator using the second mask process;
• forming an active layer, a source electrode, a drain electrode, and a data line using the second mask process, the source electrode and the drain electrode formed from the electrode metal layer;
• sequentially forming a first transparent conductive material layer on a portion of the drain electrode and a sensing metal layer on the gate insulator using a third mask process;
• forming a pixel electrode from the first transparent conductive material layer and a touch sensing line and a sensing contact part from the sensing metal layer using the third mask process;
• forming a protective layer over the pixel electrode and the touch sensing line using a fourth mask process;
• forming a contact hole through the protective layer that exposes a portion of the sensing contact part using the fourth mask process;
• forming a second transparent conductive material layer on the protective layer that is in contact with the sensing contact part via the contact hole using a fifth mask process;
• and
• forming a common electrode that is overlapped with the pixel electrode from the second transparent conductive material layer through the fifth mask process.

A touch screen-integrated display device comprising:

• a plurality of gate lines extending along a first direction on a substrate, the plurality of gate lines including a first gate line and a second gate line that is adjacent to the first gate line without any intermediate gate lines between the first gate line and the second gate line;
• a plurality of data lines extending along a second direction, the plurality of data lines on a gate insulator that is on the substrate, wherein the plurality of data lines includes a first data line;
• a touch sensing line between the plurality of data lines on the substrate;
• a first subpixel at an intersection of the first gate line and the first data line, the first subpixel including:
• a first transistor that is electrically connected to the first data line and the first gate line and disposed on a left side of the first data line, and drives the first subpixel based on a first voltage on the first data line, the first transistor including:
• a gate electrode on the substrate,
• a part of the gate insulator over the gate electrode,
• an active layer on the part of the gate insulator that is over the gate electrode,
• a drain electrode on the active layer,
• a source electrode on the active layer, and
• a pixel electrode that is electrically connected to the drain electrode;
• a second subpixel at an intersection of the second gate line and the first data line, the second subpixel including a second transistor that is electrically connected to the first data line and the second gate line and disposed on a right side of the first data line, and drives the second subpixel within based on a second voltage on the first data line, and
• a sensing contact part on the gate insulator, the sensing contact part connected to the touch sensing line, and wherein a portion of the sensing contact part comprises a same material as the pixel electrode;
• wherein the first gate line includes a first protrusion disposed at an intersection between the touch sensing line and the first gate line, and the second gate line includes a second protrusion disposed at an intersection between the touch sensing line and the second gate line, wherein the first protrusion protrudes from the first gate line in a first direction and the second protrusion protrudes from the second gate line away from the first protrusion in a second direction that is opposite the first direction,
• wherein the first protrusion overlaps the drain electrode of the first transistor, and the second protrusion overlaps the drain electrode of the second transistor.