Phase shift mask
AssigneeSamsung Electronics Co., Ltd.
InventorsIl-yong Jang, Hyung-ho Ko, Jin-sang Yoon
Life of this patent
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Abstract
A phase shift mask includes a substrate, a second phase shift pattern on the substrate, the second phase shift pattern extending to an outermost perimeter of the substrate, the second phase shift pattern being formed of a material that is semi-transmissive to light of a first wavelength and the substrate being substantially transparent to the light of the first wavelength such that the mask transmits about 2 to about 10% of the light of the first wavelength at the second phase shift pattern, and a first phase shift pattern on the substrate, the second phase shift pattern being disposed between the outermost perimeter of the substrate and the first phase shift pattern.
Claims9
A phase shift mask, comprising:
- a substrate;
- a second phase shift pattern on the substrate, the second phase shift pattern extending to an outermost perimeter of the substrate, the second phase shift pattern being formed of a material that is semi-transmissive to light of a first wavelength, and the substrate being substantially transparent to the light of the first wavelength, such that the mask transmits about 2 to about 10% of the light of the first wavelength at the second phase shift pattern;
- a first phase shift pattern on the substrate, the second phase shift pattern being disposed between the outermost perimeter of the substrate and the first phase shift pattern;
- and
- an open area between the first and second phase shift patterns in which no phase shift pattern is disposed, the open area continuously surrounding the first phase shift pattern.
A phase shift mask, comprising:
- a substrate;
- and
- a phase shift layer on the substrate, wherein an edge portion of the phase shift mask is a semitransparent region, wherein:
- the phase shift mask includes a main pattern region and an open area,
- the main pattern region has substantially the same thickness as the semitransparent region, and
- the open area is an area in which no phase shift pattern is disposed, and continuously surrounds the main pattern region.
Dependencies are inferred from the claim text.