Back to results
US 10,473,853 B2Granted
Fully integrated avalanche photodiode receiver
AssigneeSifotonics Technologies Co., Ltd.
InventorsMengyuan Huang, Tzung-I Su, Su Li, Naichuan Zhang, Pengfei Cai, Wang Chen, Ching-yin Hong, Dong Pan
Life of this patent
Estimating the term…
Abstract
Various embodiments of a fully integrated avalanche photodiode receiver and manufacturing method thereof are described herein. A photonic device includes a silicon-on-insulator (SOI) substrate with a buried oxide (BOX) layer therein, an avalanche photodiode integrated with the SOI substrate, a capacitor integrated with the SOI substrate, a resistor integrated with the SOI substrate, and silicon passive waveguides as well as bonding pads integrated with the SOI substrate.
Claims19
A photonic device, comprising:
- a silicon on insulator (SOI) substrate with a buried oxide (BOX) layer therein;
- an avalanche photodiode integrated with the SOI substrate;
- a capacitor integrated with the SOI substrate;
- a resistor integrated with the SOI substrate;
- one or more silicon passive waveguides;
- and
- one or more bonding pads integrated with the SOI substrate,
- wherein the avalanche photodiode comprises:
- the SOI substrate;
- a silicon (Si) waveguide and a heavily n-type Si contact layer disposed over the BOX layer of the SOI substrate;
- an n-type Si layer disposed over the heavily n-type Si contact layer;
- an intrinsic Si multiplication layer disposed over the n-type Si layer;
- a p-type Si charge layer disposed over the intrinsic Si multiplication layer;
- an intrinsic germanium (Ge) absorption layer disposed over the p-type Si charge layer;
- a heavily-doped p-type contact layer disposed over the intrinsic Ge absorption layer;
- one or more contact vias formed on the heavily-doped p-type contact layer, the one or more contact vias filled with tungsten;
- and
- a metal layer disposed over the one or more contact vias.
15 more elements
A photonic device, comprising:
- a silicon on insulator (SOI) substrate with a buried oxide (BOX) layer therein;
- an avalanche photodiode integrated with the SOI substrate;
- a capacitor integrated with the SOI substrate;
- a resistor integrated with the SOI substrate;
- one or more silicon passive waveguides;
- and
- one or more bonding pads integrated with the SOI substrate,
- wherein the capacitor comprises:
- the SOI substrate;
- a metal layer functioning as a capacitor electrode;
- a dielectric layer;
- and
- one or more contact vias connecting the dielectric layer and the metal layer, the one or more contact vias filled with tungsten.
10 more elements
A photonic device, comprising:
- a silicon on insulator (SOI) substrate with a buried oxide (BOX) layer therein;
- an avalanche photodiode integrated with the SOI substrate;
- a capacitor integrated with the SOI substrate;
- a resistor integrated with the SOI substrate;
- one or more silicon passive waveguides;
- and
- one or more bonding pads integrated with the SOI substrate,
- wherein the resistor comprises:
- the SOI substrate;
- a metal layer functioning as a resistor electrode;
- a heavily-doped n-type Si contact layer;
- and
- one or more contact vias connecting the heavily-doped n-type Si layer and the metal layer, the one or more contact vias filled with tungsten.
10 more elements
A photonic device, comprising:
- a silicon on insulator (SOI) substrate with a buried oxide (BOX) layer therein;
- an avalanche photodiode integrated with the SOI substrate;
- a capacitor integrated with the SOI substrate;
- a resistor integrated with the SOI substrate;
- and
- one or more bonding pads integrated with the SOI substrate,
- wherein either:
- the capacitor comprises:
- the SOI substrate;
- a metal layer functioning as a capacitor electrode;
- a dielectric layer;
- and
- one or more contact vias connecting the dielectric layer and the metal layer, the one or more contact vias filled with tungsten, or
- the resistor comprises:
- the SOI substrate;
- a metal layer functioning as a resistor electrode;
- a heavily-doped n-type Si contact layer;
- and
- one or more contact vias connecting the heavily-doped n-type Si layer and the metal layer, the one or more contact vias filled with tungsten.
16 more elements
Dependencies are inferred from the claim text.