Leakage current measurement circuit, integrated circuit and system including same
AssigneeSamsung Electronics Co., Ltd.
InventorsGhil-Geun Oh, Yeon-Joong Shin, Da-Rae Jung
Life of this patent
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Abstract
A leakage current measurement circuit is provided. The leakage current measurement circuit includes a leakage generation circuit and a detection circuit. The leakage generation circuit generates a leakage current from a start time point and generates a leakage voltage signal having a voltage level that changes from an initial voltage based on the leakage current. The detection circuit generates a detection signal having an activation time, the detection signal being generated from the start time point to a detection time point, and the detection time point corresponding to when the voltage level of the leakage voltage signal reaches a target voltage.
Claims19
A leakage current measurement circuit comprising:
- a leakage generation circuit configured to generate, based on an enable signal, a leakage current from a start time point and generate a leakage voltage signal having a voltage level that changes from an initial voltage based on the leakage current;
- and
- a detection circuit configured to generate a detection signal having an activation time, the detection signal being generated from the start time point to a detection time point, and the detection time point corresponding to when the voltage level of the leakage voltage signal reaches a target voltage,
- wherein the leakage current measurement circuit is configured to:
- operate in a first operation mode for measuring an N-type semiconductor component leakage current based on a selection signal indicating the first operation mode;
- and
- operate in a second operation mode for measuring a P-type semiconductor component leakage current based on the selection signal indicating the second operation mode.
A leakage current measurement circuit comprising:
- a leakage generation circuit configured to generate a leakage current from a start time point and generate a leakage voltage signal having a voltage level that changes from an initial voltage based on the leakage current;
- and
- a detection circuit configured to generate a detection signal having an activation time, the detection signal being generated from the start time point to a detection time point, and the detection time point corresponding to when the voltage level of the leakage voltage signal reaches a target voltage,
- wherein the leakage generation circuit includes:
- an N-type semiconductor component connected between a ground voltage and a tracking node, the N-type semiconductor component being configured to operate based on a selection signal, and the leakage voltage signal being provided at the tracking node;
- an N-type transistor connected in series with the N-type semiconductor component between the ground voltage and the tracking node, the N-type transistor being configured to operate based on an enable signal;
- a P-type semiconductor component connected between a power supply voltage and the tracking node, the P-type semiconductor component being configured to operate based on the selection signal;
- and
- a P-type transistor connected in series with the P-type semiconductor component between the power supply voltage and the tracking node, the P-type transistor being configured to operate based on the enable signal.
An integrated circuit formed in a semiconductor die, the integrated circuit comprising:
- a leakage current measurement circuit configured to measure a leakage current of the semiconductor die;
- and
- a monitoring circuit configured to monitor an operation of the integrated circuit based on an output of the leakage current measurement circuit,
- wherein the leakage current measurement circuit comprises:
- a leakage generation circuit configured to generate, based on an enable signal, the leakage current from a start time point and generate a leakage voltage signal having a voltage level that changes from an initial voltage based on the leakage current;
- and
- a detection circuit configured to generate a detection signal having an activation time, the detection signal being generated from the start time point to a detection time point, and the detection time point corresponding to when the voltage level of the leakage voltage signal reaches a target voltage, and
- wherein the leakage current measurement circuit is configured to:
- operate in a first operation mode for measuring an N-type semiconductor component leakage current based on a selection signal indicating the first operation mode;
- and
- operate in a second operation mode for measuring a P-type semiconductor component leakage current based on the selection signal indicating the second operation mode.
Dependencies are inferred from the claim text.