Backside CMOS compatible BioFET with no plasma induced damage
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsYi-Shao Liu, Chun-Ren Cheng, Ching-Ray Chen, Yi-Hsien Chang, Fei-Lung Lai, Chun-Wen Cheng
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Abstract
The present disclosure provides a bio-field effect transistor (BioFET) device and methods of fabricating a BioFET and a BioFET device. The method includes forming a BioFET using one or more process steps compatible with or typical to a complementary metal-oxide-semiconductor (CMOS) process. The BioFET device includes a gate structure disposed on a first surface of a substrate and an interface layer formed on a second surface of the substrate. The substrate is thinned from the second surface to expose a channel region before forming the interface layer.
Claims20
A method of using a biological field-effect transistor (BioFET) device, comprising:
- providing the bioFET device, the bioFET device having a gate structure formed on a first surface of a semiconductor layer, a channel region in the semiconductor layer below the gate structure, source and drain regions in the semiconductor layer on opposite sides of the channel region,
- wherein the gate structure is aligned between the source and drain regions, and a sensing film is directly on the source, drain, and channel regions on a second surface of the semiconductor layer, the second surface being opposite from the first surface;
- and
- disposing a film treatment or a receptor on the sensing film.
A method of using a biological field-effect transistor (BioFET) device, comprising:
- providing the bioFET device, the bioFET device having a gate structure formed on a first surface of a channel region in a semiconductor layer, source and drain regions in the semiconductor layer on opposite sides of the channel region,
- wherein the gate structure is aligned between the source and drain regions, and a sensing film is formed directly on the source and drain regions and on a second surface of the channel region, the second surface being opposite from the first surface;
- and
- disposing a film treatment or a receptor on the sensing film.
A method of using a biological field-effect transistor (BioFET) device, comprising:
- providing the bioFET device, the bioFET device having a gate structure formed over a channel region in a semiconductor layer, source and drain regions in the semiconductor layer on opposite sides of the channel region,
- wherein the gate structure is aligned between the source and drain regions, and a sensing film is formed directly on the source, drain, and channel regions and beneath the gate structure, and
- disposing a film treatment or a receptor on the sensing film.
Dependencies are inferred from the claim text.