Light-addressable potentiometric sensing units
AssigneeChang Gung University
InventorsChao-Sung Lai, Chia-Ming Yang, Chun-Hui Chen, Tsung-Cheng Chen
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Abstract
Light-addressable potentiometric sensing units are provided. A light-addressable potentiometric sensing unit comprises a conductive substrate, a metal oxide semiconductor layer, and a sensing layer. The metal oxide semiconductor layer is made of indium gallium zinc oxide, indium gallium oxide, indium zinc oxide, indium oxide co-doped with tin and zinc, tin oxide, or zinc oxide. The wide-band gap characteristic of the metal oxide semiconductor layer enables the light-addressable potentiometric sensing unit to resist the interference from visible light. The light-addressable potentiometric sensing unit therefore exhibits a more stable performance.
Claims10
A light-addressable potentiometric sensing unit, comprising:
- a conductive substrate, wherein the conductive substrate is made of indium tin oxide (ITO) and is deposited on a glass;
- a metal oxide semiconductor layer disposed on the conductive substrate, wherein the metal oxide semiconductor layer is made of indium gallium zinc oxide (IGZO);
- and
- a sensing layer disposed on the metal oxide semiconductor layer, wherein the sensing layer is made of niobium oxide (NbOx);
- wherein the metal oxide semiconductor layer absorbs 80% ultraviolet light at 330 nm, and converts the ultraviolet light into photo-voltage in 300-380 nm.
Dependencies are inferred from the claim text.