Gas sensor
AssigneeWinbond Electronics Corp.
InventorsMing-Chih Tsai, Yu-Hsuan Ho
Life of this patent
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Abstract
A gas sensor includes a first substrate, at least one first electrode, a sensing structure, at least one second electrode, and a second substrate. The at least one first electrode is located on the first substrate. The sensing structure is located on the at least one first electrode and the first substrate, and the sensing structure includes a first semiconductor layer and a second semiconductor layer. The first semiconductor layer having a first conductive type covers the first substrate and the at least one first electrode; the second semiconductor layer having a second conductive type is located on the first semiconductor layer. The at least one second electrode covers the sensing structure. The second substrate covers the at least one second electrode and the sensing structure.
Claims11
A gas sensor comprising:
- at least one first electrode located on a first substrate, wherein the at least one first electrode comprises a plurality of first electrodes spaced apart from each other;
- a sensing structure located on the at least one first electrode and on the first substrate, the sensing structure comprising:
- a first semiconductor layer, having a first conductive type and covering the first substrate and the at least one first electrode, wherein the first semiconductor layer is located between two adjacent first electrodes to form a first interface of the first conductive type;
- and
- a second semiconductor layer, having a second conductive type and located on the first semiconductor layer, wherein a junction of the first conductive type and the second conductive type is formed between the first semiconductor layer and the second semiconductor layer;
- at least one second electrode, covering the sensing structure, wherein the at least one second electrode comprises a plurality of second electrodes spaced apart from each other, and the second semiconductor layer is located between two adjacent second electrodes to form a second interface of the second conductive type;
- and
- a second substrate, covering the at least one second electrode and the sensing structure
- wherein the two adjacent first electrodes and the first semiconductor layer therebetween construct a first sensor having the first interface of the first conductive type,
- the two adjacent second electrodes and the second semiconductor layer therebetween construct a second sensor having the second interface of the second conductive type, and
- the at least one first electrode, the at least one second electrode, the first semiconductor layer and the second semiconductor layer construct a third sensor having the junction of the first conductive type and the second conductive type.
Dependencies are inferred from the claim text.