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US 10,472,734 B2Granted
III-V or II-VI compound semiconductor films on graphitic substrates
AssigneeNorwegian University of Science and Technology (Ntnu)
InventorsBjørn-Ove Fimland, Dheeraj L. Dasa, Helge Weman
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Abstract
A composition of matter comprising a film on a graphitic substrate, said film having been grown epitaxially on said substrate, wherein said film comprises at least one group III-V compound or at least one group II-VI compound.
Claims13
A composition comprising a continuous film on a graphitic substrate, wherein said composition comprises, in the following order,
- (a) a graphitic substrate having a thickness of 20 nm or less,
- (b) a base layer comprising GaSb, InAs, AsSb, SbBi, or Sb;
- and
- (c) a film comprising a group III-V compound selected from a binary group III-V compound, a ternary group III-V compound, a quaternary group III-V compound, or a plurality of such compounds in different layers,
- wherein the binary group III-V compound is selected from InAs, GaAs, AlAs, InP, GaP, AlP, InSb, GaSb, and AlSb;
- wherein the ternary group III-V compound is defined by formula XYZ, wherein X is a group III element, Y is a group III or group V element, and Z is a group V element, with the proviso that Y is different than X and Z;
- and
- wherein the quaternary group III-V compound consists of elements of Group III and one or more elements of Group V, wherein the elements of Group III in the quaternary group III-V compound are selected from Al, Ga, and In;
- with the proviso that the group III-V compound of the film is different than the base layer.
6 more elements
Dependencies are inferred from the claim text.