Semiconductor structure and method of forming the same

A semiconductor structure, comprising:

• a substrate comprising a pad metal and a fuse metal formed thereon, wherein the pad metal and the fuse metal are formed in a same material layer and have a same thickness;
• a liner on the pad metal and the fuse metal;
• an etching stop layer on the liner on the fuse metal;
• a dielectric layer on the liner and on the etching stop layer, wherein the dielectric layer is in direct contact with the liner on a top surface the pad metal;
• a passivation layer on the dielectric layer;
• a pad opening vertically aligned above the pad metal, penetrating through the passivation layer, the dielectric layer and the liner, exposing the pad metal;
• and
• a fuse opening aligned vertically above the fuse metal, penetrating through the passivation layer, the dielectric layer and the etching stop layer without penetrating through the liner and exposing a surface of the liner.