Temperature-controlled gas supply line with dilution gas flows supplied at multiple locations

A device for depositing one or more organic layers onto a substrate (20), the device comprising:

• a first process gas source (1) with a first evaporator (1′), wherein a first solid or liquid starting material is evaporated into a first gaseous starting material in the first evaporator (1′), wherein the first process gas source (1) is temperature-controlled to a first source temperature (T1) by a first source temperature-controlling device (2);
• a first carrier gas supply line (4) fluidly connected to the first evaporator (1′) and configured to feed a first carrier gas flow for transporting the first gaseous starting material out of the first evaporator (1′) into a first transport line (5);
• the first transport line (5) that is temperature-controlled to a first line temperature (T2) by means of a line temperature-controlling device (7);
• a first dilution gas supply line (8) fluidly connected to the first transport line (5) and configured to feed a first dilution gas flow into the first transport line (5), wherein the first dilution gas supply line (8) is located upstream from the first line temperature-controlling device (7);
• a processing chamber (30);
• a gas inlet element (31) disposed in the processing chamber (30) and configured to supply the first gaseous starting material into the processing chamber (30), wherein the gas inlet element (31) is temperature-controlled to a gas inlet temperature (T5) by means of a gas inlet temperature-controlling device (32), wherein the gas inlet element (31) is fluidly connected to the first transport line (5);
• a second dilution gas supply line (34) fluidly connected to the gas inlet element (31) upstream from the gas inlet temperature-controlling device (32) and configured to feed a second dilution gas flow into the gas inlet element (31);
• a susceptor (35) that is temperature-controlled to a susceptor temperature (T6) by means of a susceptor temperature-controlling device (37), wherein the substrate (20) is disposed on the susceptor (35), and wherein a layer is grown on the substrate (20) by means of the first gaseous starting material;
• and
• a controlling device (38) configured to control the first source temperature-controlling device (2) such that a temperature of the first source temperature-controlling device (2) is equal to the first source temperature (T1), configured to control the first line temperature-controlling device (7) such that a temperature of the first line temperature-controlling device (7) is equal to the first line temperature (T2), configured to control the gas inlet temperature-controlling device (32) such that a temperature of the gas inlet temperature-controlling device (32) is equal to the gas inlet temperature (T5), and configured to control the susceptor temperature-controlling device (37) such that a temperature of the susceptor temperature-controlling device (37) is equal to the susceptor temperature (T6),
• wherein the controlling device (38) is further configured to, while the layer is being deposited on the substrate (20), control the first source temperature (T1) to be higher than the first line temperature (T2), control the first line temperature (T2) to be higher than the gas inlet temperature (T5), and control the gas inlet temperature (T5) to be higher than the susceptor temperature (T6).