Nitride semiconductor template, manufacturing method thereof, and epitaxial wafer
AssigneeSumitomo Chemical Company, Limited
InventorsShusei Nemoto, Taichiro Konno, Hajime Fujikura
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Abstract
A nitride semiconductor template includes a heterogeneous substrate, a first nitride semiconductor layer that is formed on one surface of the heterogeneous substrate, includes a nitride semiconductor and has an in-plane thickness variation of not more than 4.0%, and a second nitride semiconductor layer that is formed on an annular region including an outer periphery of an other surface of the heterogeneous substrate, includes the nitride semiconductor and has a thickness of not less than 1 μm.
Claims26
A nitride semiconductor template, comprising:
- a heterogeneous substrate;
- a first nitride semiconductor layer that is formed on one surface of the heterogeneous substrate, comprises a nitride semiconductor, and has an in-plane thickness variation of not more than 4.0% the in-plane thickness variation being a value of a standard deviation of a film thickness obtained at, measurement points ,divided by an average film thickness of the measurement points in the first nitride semiconductor layer;
- and
- a second nitride semiconductor layer that is formed on an annular region including an outer periphery of an other surface of the heterogeneous substrate, comprises the nitride semiconductor, and has a thickness of not less than 1 μm.
A method for manufacturing a nitride semiconductor template. the method comprising:
- growing a first nitride semiconductor layer comprising a nitride semiconductor and having an in-plane thickness variation of not more than 4.0% on one surface of a heterogeneous substrate, the in-plane thickness variation being a value of a standard deviation of a film thickness obtained at measurement points divided ban average film thickness of the measurement points in the first nitride semiconductor layer;
- and
- growing a second nitride semiconductor layer comprising the nitride semiconductor and having a thickness of not less than 1 μm on an annular region including an outer periphery of an other surface of the heterogeneous substrate.
Dependencies are inferred from the claim text.