Method to obtain SiC class of films of desired composition and film properties

An apparatus for depositing a silicon carbide film on a substrate, the apparatus comprising:

• a reaction chamber comprising the substrate;
• a remote plasma source coupled to the reaction chamber and configured to generate a plasma outside the reaction chamber;
• one or more first gas inlets coupled to the reaction chamber;
• a second gas inlet coupled to the reaction chamber, wherein a distance between the second gas inlet and the one or more first gas inlets is between about 5 cm and about 20 cm;
• and
• a controller comprising instructions for performing the following operations:
• flowing a first organo-silicon precursor through the one or more first gas inlets into the reaction chamber;
• flowing a second organo-silicon precursor through the one or more first gas inlets into the reaction chamber to mix with the first organo-silicon precursor, wherein the second organo-silicon precursor is different from the first organo-silicon precursor;
• generating hydrogen radical species from a hydrogen source gas (H2) in the remote plasma source;
• and
• flowing the hydrogen radical species through the second gas inlet into the reaction chamber, wherein the hydrogen radical species in an environment adjacent to the substrate react with the first organo-silicon precursor and the second organo-silicon precursor to form the silicon carbide film on the substrate.