Imaging element, stacked-type imaging element, solid-state imaging device, and driving method for solid-state imaging device

An electronic apparatus comprising:

• an imaging device including a plurality of pixels, each pixel of the plurality of pixels including:
• a first photoelectric conversion unit disposed in a substrate, and
• a second photoelectric conversion unit disposed above and at a light-incident side of the substrate, the second photoelectric conversion unit including:
• a first electrode,
• a stacked layer structure including a plurality of layers above the first electrode, wherein a first layer of the stacked layer structure is an oxide semiconductor layer, and wherein a second layer of the stacked layer structure is a photoelectric conversion layer,
• a second electrode above the stacked layer structure,
• a third electrode disposed at a same layer as the first electrode, and
• an insulating material between the third electrode and the stacked layer structure, wherein a portion of the insulating material is between the first electrode and the third electrode;
• and
• a lens configured to direct light onto a surface of the imaging device;
• and
• circuitry configured to control output signals from the imaging device.

A method of driving an imaging device, the method comprising:

• applying a first potential to a charge storage electrode during a charging period;
• applying a second potential to a first electrode during the charging period, wherein the first potential is greater than the second potential;
• applying a third potential to the charge storage electrode during a charge transfer period;
• and
• applying a fourth potential to the first electrode during the charge transfer period, wherein the fourth potential is greater than the third potential, and
• wherein,
• the imaging device includes a plurality of pixels, each pixel of the plurality of pixels including:
• a first photoelectric conversion unit disposed in a substrate;
• and
• a second photoelectric conversion unit disposed above and at a light-incident side of the substrate, the second photoelectric conversion unit including:
• the first electrode,
• a stacked layer structure including a plurality of layers above the first electrode, wherein a first layer of the stacked layer structure is an oxide semiconductor layer, and wherein a second layer of the stacked layer structure is a photoelectric conversion layer,
• a second electrode above stacked layer structure,
• the charge storage electrode disposed at a same layer as the first electrode, and
• an insulating material between the charge storage electrode and the stacked layer structure, wherein a portion of the insulating material is between the first electrode and the charge storage electrode.