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US 10,468,404 B2Granted
Monolithically integrated low loss passive components and associated circuitry and methods for the manufacture thereof
AssigneeBAE Systems Information and Electronic Systems Integration Inc.
InventorRenyuan Wang
Life of this patent
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Abstract
An oscillator having a dielectric wave guiding resonant cavity and an oscillator circuit operatively coupled to the dielectric wave guiding resonant cavity having at least one transistor, the two being of a unitary construction.
Claims18
An oscillator, comprising:
- a dielectric waveguide resonator, wherein the dielectric waveguide resonator comprises Silicon Carbide;
- and
- an oscillator circuit operatively coupled to the dielectric waveguide resonator comprising at least one transistor, wherein the oscillator circuit is monolithically integrated with the dielectric waveguide resonator.
A method of integrating low loss passive components with high electron mobility transistors, the method comprising:
- obtaining first material, wherein the first material is a low dielectric loss material that is suitable for etching;
- growing a second material on a top surface of the first material, wherein the second material is suitable for etching, the first and second materials forming a monolithically integrated assembly having an upper portion made of the first material and a lower portion of the second material;
- fabricating at least one transistor on the first material;
- mounting a handle to the first material using an intermediate layer;
- applying hardmask and photoresist layers to the second material from a backside thereof;
- stripping the photoresist;
- performing a deep etch of the second material;
- stripping the hardmask;
- and
- removing the wafer handle and intermediate layers.
7 more elements
A method of integrating low loss passive components with high electron mobility transistors, the method comprising:
- obtaining a first material, wherein the first material is a low dielectric loss material that is suitable for etching;
- growing a second material on a top surface of the first material, wherein the second material is suitable for etching, the first and second materials forming a monolithically integrated assembly having an upper portion made of the first material and a lower portion of the second material;
- forming at least one high electron mobility transistor in the second material;
- and
- etching at least one passive component in the first material.
2 more elements
Dependencies are inferred from the claim text.