Precursors and flowable CVD methods for making low-K films to fill surface features

A method for depositing a silicon-containing film, the method comprising:

• placing a substrate comprising at least one surface feature into a reactor which is at a temperature of from about −20° C. to about 400° C.;
• introducing into the reactor at least one silicon-containing compound having at least one acyloxy group, wherein the at least one silicon-containing compound is an acyloxysilane having a structure:
• wherein R is selected from the group consisting of hydrogen, and a linear or branched C1 to C6 alkyl group;
• R1 is selected from the group consisting of a linear or branched C1 to C6 alkyl group, a linear or branched C2 to C6 alkenyl group, and a linear or branched C2 to C6 alkynyl group;
• and
• providing an in-situ plasma or remote plasma source to the reactor to at least partially react the at least one silicon-containing compound to form a flowable liquid oligomer wherein the flowable liquid oligomer forms a coating on the substrate and at least partially fills at least a portion of the at least one surface feature.