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US 10,461,009 B2Granted
3DIC packaging with hot spot thermal management features
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsWensen Hung, Szu-Po Huang, Hsiang-Fan Lee, Kim Hong Chen, Chi-Hsi Wu, Shin-Puu Jeng
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Abstract
A package includes a substrate having a conductive layer, and the conductive layer comprises an exposed portion. A die stack is disposed over the substrate and electrically connected to the conductive layer. A high thermal conductivity material is disposed over the substrate and contacting the exposed portion of the conductive layer. The package further includes a contour ring over and contacting the high thermal conductivity material.
Claims20
A package comprising:
- a die stack comprising:
- a plurality of first dies;
- and
- a second die bonded to the plurality of first dies, wherein a first portion of the second die is disposed directly under the plurality of first dies, and wherein a second portion of the second die extends laterally past sidewalls of the plurality of first dies;
- and
- a package substrate, wherein the die stack is bonded to a top surface of the package substrate by a plurality of conductive connectors, and wherein the package substrate comprises:
- a conductive line extending continuously from the plurality of conductive connectors to a thermal interface material (TIM) at the top surface of the package substrate;
- and
- a solder resist, wherein the solder resist covers a first portion of the conductive line and does not cover a second portion of the conductive line, and wherein the TIM extends through the solder resist to contact the second portion of the conductive line.
6 more elements
A package comprising:
- a die stack bonded to a first side of a package substrate, wherein the die stack is electrically connected to a conductive layer of the package substrate, and wherein the die stack comprises:
- a first die;
- and
- one or more second dies over and electrically connected to the first die;
- a first material on the first side of the package substrate and physically contacting a first region of the conductive layer, wherein the first material has a thermal conductivity between 3 W/m·K and 50 W/m·K, wherein the first material is disposed directly under the one or more second dies and extends along a sidewall of the first die;
- and
- a second material on the first side of the package substrate and physically contacting a second region of the conductive layer, wherein the second material has a thermal conductivity between 3 W/m·K and 50 W/m·K, wherein the first material and the second material are physically separated, and wherein the conductive layer thermally connects the first material to the second material.
4 more elements
A package comprising:
- a first die stack comprising:
- a bottom die;
- and
- a top die over and bonded to the bottom die;
- a package substrate bonded to the first die stack, wherein a first conductive line in the package substrate is electrically connected to the first die stack;
- a first thermal interface material (TIM) on a same surface of the package substrate as the first die stack, wherein the first TIM extends through a solder resist to contact the first conductive line, and wherein the first conductive line thermally connects the first die stack to the first TIM;
- and
- a first heat dissipation feature contacting the first TIM.
5 more elements
Dependencies are inferred from the claim text.