Boron nitride material and method of preparation thereof

A method of preparing a boron nitride material, the method comprising

• providing a substrate, wherein the substrate is a metallic substrate or graphene or a substrate having one or more carbon nanotubes, and
• sublimating an amine borane complex onto the substrate, the amine borane complex having general formula
• R3N.BX3,
• wherein
• X at each occurrence is independently selected from the group consisting of hydrogen and a halogen, and R at each occurrence is independently a linear or branched, unsubstituted alkyl with 1 to 20 carbon atoms;
• and
• wherein the sublimating is carried out (i) at a temperature of about 50° C. or less to obtain a boron nitride material consisting essentially of boron nitride, or (ii) at a temperature of greater than about 50° C. and less than about 100° C. to obtain a boron nitride material doped with about 2 wt % to about 5 wt % carbon, or (iii) at a temperature in the range of about 100° C. to about 200° C. to obtain a boron nitride composite comprising one or more domains of boron nitride and carbon.