# US 10,455,704 B2 · Method for copper filling of a hole in a component carrier

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- Number: US 10,455,704 B2
- Document ID: US10455704B2
- Status: Granted
- Kind: B2
- Application number: 16/049,512
- Filed: 2018-07-30
- Published: 2019-01-31
- Granted: 2019-10-22
- Earliest claimed: 2017-07-31
- Assignees: AT&S Austria Technologie & Systemtechnik Aktiengesellschaft
- Applicants: AT&S Austria Technologie & Systemtechnik Aktiengesellschaft
- Inventors: Ares Wang; Yee-Bing Ling; Annie Tay
- Web page: https://patentgrep.com/patent/US10455704B2

## CPC

- H05K 3/0094: {Filling or covering plated through-holes or blind plated vias, e.g. for masking or for mechanical reinforcement}
- H05K 1/0298: {Multilayer circuits}
- H05K 3/0026: {by laser ablation}
- H05K 3/0055: {After-treatment, e.g. cleaning or desmearing of holes}
- H05K 3/241: {characterised by the electroplating method; means therefor, e.g. baths or apparatus}
- H05K 3/244: {Finish plating of conductors, especially of copper conductors, e.g. for pads or lands (selective plating methods H05K3/243; finish plating of conductors made by printing techniques H05K3/246; solder as finish H05K3/3465)}
- H05K 3/423: {characterised by electroplating method}
- H05K 3/4644: {by building the multilayer layer by layer, i.e. build-up multilayer circuits (making via holes in the insulating layers H05K3/0011; special circuit boards as base or core whereon the multilayer is built H05K3/4602)}
- H05K 2201/0344: Electroless sublayer, e.g. Ni, Co, Cd or Ag; Transferred electroless sublayer
- H05K 2201/09563: Metal filled via
- H05K 2203/1476: Same or similar kind of process performed in phases, e.g. coarse patterning followed by fine patterning
- Y10T 29/49165: by forming conductive walled aperture in base
- H05K: PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- Y10T: TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION

## Abstract

A method of filling a hole formed in a component carrier with copper is disclosed. The method comprises i) forming a layer of an electrically conductive material covering at least part of a surface of a wall, wherein the wall delimits the hole, and subsequently ii) covering at least partially the layer and filling at least partially an unfilled volume of the hole with copper using a plating process including a bath. Hereby, the bath comprises a concentration of a copper ion, in particular Cu2+, in a range between 50 g/L and 75 g/L, in particular in a range between 60 g/L and 70 g/L.

## Claims

### Claim 1

A method of filling a hole formed in a component carrier with copper, the method comprising:
forming a layer of an electrically conductive material covering at least part of a surface of a wall, wherein the wall delimits the hole; and
subsequently, covering at least partially the layer and filling at least partially an unfilled volume of the hole with copper using a plating process including a bath,
wherein the bath comprises a concentration of a copper ion in a range between 50 g/L and 75 g/L, and
wherein at least partially covering the layer and at least partially filling the hole are done by flash-plating.

### Claim 2 (depends on 1)

The method according to claim 1, further comprising: supplying the bath with copper sulfate (CuSO4) and/or copper sulfate pentahydrate (CuSO4*5H2O).

### Claim 3 (depends on 1)

The method according to claim 1, wherein the bath further comprises:
sulfuric acid (H2SO4) with a concentration in a range between 80 g/L and 110 g/L.

### Claim 4 (depends on 1)

The method according to claim 1, wherein the bath further comprises:
at least one of the group consisting of iron ions, chloride (Cl−) a brightening agent, and a leveler agent.

### Claim 5 (depends on 1)

The method according to claim 1, further comprising:
filling at least partially a remaining volume of the hole with copper using a further plating process including a further bath, wherein the further bath comprises at least approximately the same composition of chemical ingredients and/or at least approximately the same concentration of chemical ingredients as the first bath.

### Claim 6 (depends on 1)

The method according to claim 1, further comprising:
filling at least partially a remaining volume of the hole with copper using a further plating process including a further bath, wherein the further bath comprises a different composition of chemical ingredients and/or a different concentration of chemical ingredients as the first bath.

### Claim 7 (depends on 1)

The method according to claim 1, wherein a formed layer of electrically conductive material comprises a thickness in a range between 0.1 μm and 1 μm, and/or
wherein a copper material, which has been formed above the formed layer of electrically conductive material, comprises a thickness in a range between 0.3 μm and 15 μm.

### Claim 8 (depends on 1)

The method according to claim 1, wherein forming the layer of electrically conductive material is done by electro-less plating.

### Claim 9 (depends on 1)

The method according to claim 1, further comprising:
drilling the hole with a laser; and
removing waste products caused by laser drilling.

### Claim 10 (depends on 1)

The method according to claim 1, further comprising:
drilling the hole with a laser; and
wherein the forming of the layer is performed without previously removing waste products caused by laser drilling.

### Claim 11 (depends on 1)

The method according to claim 1, wherein an aspect ratio of the hole is in a range between 0.5 and 1.5.

### Claim 12 (depends on 1)

The method according to claim 1, wherein the hole is configured as a through hole or as a blind hole.

### Claim 13 (depends on 1)

The method according to claim 1, wherein the electrically conductive material comprises at least one of the group consisting of copper, aluminum, and nickel.

### Claim 14 (depends on 1)

The method according to claim 1, wherein the copper ion is Cu2+.

### Claim 15 (depends on 1)

The method according to claim 1, wherein the bath comprises a concentration of the copper ion in a range between 60 g/L and 70 g/L.