# US 10,455,173 B2 · Image sensor and electronic camera > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 10,455,173 B2 - Document ID: US10455173B2 - Status: Granted - Kind: B2 - Application number: 15/763,137 - Filed: 2016-09-27 - Published: 2018-09-27 - Granted: 2019-10-22 - Earliest claimed: 2015-09-30 - Assignees: Nikon Corporation - Applicants: Nikon Corporation - Inventors: Osamu Saruwatari - Web page: https://patentgrep.com/patent/US10455173B2 ## CPC - H04N 25/709: Circuitry for control of the power supply - H10F 99/00: Subject matter not provided for in other groups of this subclass - G01N 21/6458: {Fluorescence microscopy (fluorescence microscopes per se G02B21/0076 and G02B21/16)} - G02B 21/08: Condensers - G02B 21/16: adapted for ultraviolet illumination {; Fluorescence microscopes (G02B21/0076 takes precedence)} - H04N 25/58: involving two or more exposures - H04N 25/616: involving a correlated sampling function, e.g. correlated double sampling [CDS] or triple sampling - H04N 25/76: Addressed sensors, e.g. MOS or CMOS sensors - H04N 25/77: Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components - H10F 39/12: Image sensors - G01N 2021/8887: {based on image processing techniques} - H10F 39/182: {Colour image sensors} - H10F 39/199: {Back-illuminated image sensors} - H10F 39/8053: {Colour filters} - H10F 39/8063: {Microlenses} - H10F 39/809: {of hybrid image sensors} - H10F 39/811: {Interconnections} - H04N: PICTORIAL COMMUNICATION, e.g. TELEVISION - H10F: INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION - G01N: INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES (measuring or testing apparatus or processes other than immunoassay, involving enzymes or microorganisms C12M, C12Q) - G02B: OPTICAL ELEMENTS, SYSTEMS OR APPARATUS ## Abstract An image sensor includes a first voltage source that supplies a first voltage and a plurality of pixels supplied with the first voltage. The pixel includes a photoelectric conversion unit that photoelectrically converts incident light, an accumulation unit to which an electric charge resulting from photoelectric conversion by the photoelectric conversion unit is transferred and accumulated, a transfer unit that transfers the electric charge from the photoelectric conversion unit to the accumulation unit; a second voltage source that supplies a second voltage, and a supply unit that supplies the transfer unit with a transfer signal based on either the first voltage supplied by the first voltage source or the second voltage supplied by the second voltage source. ## Claims ### Claim 1 An image sensor, comprising a first voltage source that supplies a first voltage and a plurality of pixels supplied with the first voltage, wherein the pixels each include: a photoelectric conversion unit that photoelectrically converts incident light; an accumulation unit to which an electric charge resulting from photoelectric conversion by the photoelectric conversion unit is transferred and accumulated; a transfer unit that transfers the electric charge from the photoelectric conversion unit to the accumulation unit; a second voltage source that supplies a second voltage; and a supply unit that supplies the transfer unit with a transfer signal based on either the first voltage supplied by the first voltage source or the second voltage supplied by the second voltage source; and the supply unit includes a capacitor arranged between the first voltage source and the transfer unit, and a second resistor arranged between the second voltage source and the transfer unit. ### Claim 2 (depends on 1) The image sensor according to claim 1, wherein: the supply unit includes a first resistor arranged between the first voltage source and the transfer unit and a second resistor arranged between the second voltage source and the transfer unit. ### Claim 3 (depends on 2) The image sensor according to claim 2, comprising: a first semiconductor substrate provided with the plurality of pixels; and a second semiconductor substrate provided with an A/D conversion unit for each of the plurality of pixels, the A/D conversion unit outputting a digital signal depending on the amount of the electric charge accumulated in the accumulation unit, wherein: the first voltage source is provided on the second semiconductor substrate; and the first resistor includes at least an electrode connecting the first semiconductor substrate and the second semiconductor substrate. ### Claim 4 (depends on 1) The image sensor according to claim 1, wherein: a substrate voltage is applied to the image sensor; the first voltage source supplies a voltage lower than the substrate voltage; and the second voltage source supplies a voltage higher than the substrate voltage. ### Claim 5 (depends on 4) The image sensor according to claim 4, wherein: either a third voltage higher than or equal to the substrate voltage or a fourth voltage higher than or equal to the substrate voltage and higher than the third voltage is inputted to the supply unit; and the supply unit outputs the transfer signal that is the first voltage if the third voltage is inputted and supplies the transfer signal that is the second voltage if the fourth voltage is inputted. ### Claim 6 (depends on 1) The image sensor according to claim 1, wherein: the transfer unit electrically connects the photoelectric conversion unit and the accumulation unit to transfer the electric charge generated by the photoelectric conversion unit to the accumulation unit; and the supply unit supplies the transfer unit with the transfer signal for electrically connecting or disconnecting the photoelectric conversion unit and the accumulation unit. ### Claim 7 (depends on 1) The image sensor according to claim 1, comprising: a first semiconductor substrate provided with the plurality of pixels; and a second semiconductor substrate provided with an A/D conversion unit for each of the plurality of pixels, the A/D conversion unit outputting a digital signal depending on the amount of the electric charge accumulated in the accumulation unit. ### Claim 8 (depends on 1) The image sensor according to claim 1, wherein: a part of a plurality of supply units each corresponds to the supply unit transfer the electric charge generated by the photoelectric conversion unit during a first period to the accumulation unit and another part of the plurality of supply units transfer the electric charge generated by the photoelectric conversion unit during a second period to the accumulation unit, the second period having a length different from that of the first period. ### Claim 9 (depends on 1) The image sensor according to claim 1, wherein: the photoelectric conversion unit is a pinned photodiode; and the transfer unit transfers the electric charge resulting from photoelectric conversion by the photoelectric conversion unit to the accumulation unit if the transfer signal is the first voltage based on a voltage supplied by the first voltage source, and does not transfer the electric charge resulting from photoelectric conversion by the photoelectric conversion unit to the accumulation unit if the transfer signal is the second voltage based on a voltage supplied by the first voltage source. ### Claim 10 (depends on 1) The image sensor according to claim 1, wherein: each of the plurality of pixels has a switching unit that electrically connect or disconnect the supply unit and the first voltage source. ### Claim 11 (depends on 1) An electronic camera comprising the image sensor according to claim 1.