Rinse composition, a method for forming resist patterns and a method for making semiconductor devices

A rinse composition comprising a surfactant represented by below formula (I), a C2-C16 diol derivative, and water,

• wherein X is an oxygen, nitrogen or carbon,
• R1, R2 and R3 are independently hydrogen, fluorine or C1-5 alkyl,
• Y is a hydrogen, fluorine, or C1-5 alkyl,
• each Z is independently hydrogen, fluorine, or C1-5 alkyl,
• or Y and Z are taken together to form a single bond,
• l is 1, 2, 3, 4 or 5,
• m is 0, 1, 2, 3, 4 or 5, and
• n is 0, 1 or 2 and
• wherein the diol derivative is represented by below formula (II),
• wherein R4, R5 R6 and R7 are independently hydrogen, fluorine or C1-5 alkyl,
• L1 and L2 are independently C1-5 alkane linker, C2-4 alkene linker or C2-4 alkyne linker,
• L1 and L2 are independently unsubstituted, or substituted by fluorine, C1-5 alkyl, or hydroxyl, and
• o is 0, 1 or 2.