# US 10,442,057 B2 · Carbonate PCD and methods of making the same

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- Number: US 10,442,057 B2
- Document ID: US10442057B2
- Status: Granted
- Kind: B2
- Application number: 15/382,770
- Filed: 2016-12-19
- Published: 2017-04-06
- Granted: 2019-10-15
- Earliest claimed: 2013-03-15
- Assignees: Smith International, Inc.
- Applicants: Smith International, Inc.
- Inventors: Yahua Bao
- Web page: https://patentgrep.com/patent/US10442057B2

## CPC

- B24D 18/0009: {using moulds or presses}
- B24D 3/04: and being essentially inorganic
- B24D 99/005: {Segments of abrasive wheels}
- E21B 10/567: with preformed cutting elements mounted on a distinct support, e.g. polycrystalline inserts
- E21B 10/55: with preformed cutting elements
- B24D: TOOLS FOR GRINDING, BUFFING OR SHARPENING (abrading-bodies specially designed for tumbling apparatus, e.g. abrading-balls B24B31/14; honing tools B24B33/08; lapping tools B24B37/11)
- E21B: EARTH OR ROCK DRILLING; OBTAINING OIL, GAS, WATER, SOLUBLE OR MELTABLE MATERIALS OR A SLURRY OF MINERALS FROM WELLS

## Abstract

A polycrystalline diamond body, and a method for making a carbonate polycrystalline diamond body includes combining a first quantity of diamond particles with a first quantity of magnesium carbonate to form a first layer in an enclosure, the first layer having a working surface, and placing a second quantity of magnesium carbonate in the enclosure forming a second layer, the first layer and the second layer forming an assembly. A quantity of at least one of silicon or aluminum is mixed in with or placed adjacent to at least one of the first layer or the second layer. The assembly, including the at least one of silicon or aluminum, is sintered at high pressure and high temperature, causing the at least one of silicon or aluminum to infiltrate at least one layer of the assembly, forming a polycrystalline diamond body.

## Claims

### Claim 1

A method for making a carbonate polycrystalline diamond body, comprising:
combining a first quantity of diamond particles with a first quantity of magnesium carbonate to form a first layer in an enclosure, the first layer having a working surface;
placing a second quantity of magnesium carbonate in the enclosure, forming a second layer, the first layer and the second layer forming an assembly;
silicon being mixed in with or placed adjacent to at least one of the first layer or the second layer; and
sintering the assembly including the silicon at high pressure and high temperature, causing the silicon to infiltrate at least one layer of the assembly, forming a polycrystalline diamond body.

### Claim 2 (depends on 1)

The method of claim 1, further comprising combining a second quantity of diamond particles with a third quantity of magnesium carbonate to form a third layer, the third quantity of magnesium carbonate being equal to or greater than the first quantity of the magnesium carbonate, the third layer being adjacent to the first layer.

### Claim 3 (depends on 2)

The method of claim 2, wherein the first quantity of magnesium carbonate is present at 0.5-3 wt % based on the total weight of the first layer and the third quantity of the magnesium carbonate is present at 2-9 wt % based on the total weight of the third layer.

### Claim 4 (depends on 2)

The method of claim 2, further comprising placing a substrate adjacent to the third layer, wherein the third layer is sandwiched between the substrate and the first layer.

### Claim 5 (depends on 2)

The method of claim 2, wherein the quantity of silicon is mixed with the second quantity of diamond particles and the third quantity of magnesium carbonate to form the third layer; and wherein during sintering, at least a portion of the quantity of the silicon flows in a direction away from the third layer toward the working surface.

### Claim 6 (depends on 1)

The method of claim 1, wherein the silicon comprises a material selected from the group consisting of elemental silicon, silicon dioxide, silicon carbide, and combinations thereof.

### Claim 7 (depends on 1)

The method of claim 1, wherein prior to sintering, the silicon comprises about 1.5 wt % silicon based on the total weight of the magnesium carbonate in the first layer.

### Claim 8 (depends on 1)

The method of claim 1, wherein the quantity of the silicon is mixed with the second quantity of magnesium carbonate to form the second layer, wherein during sintering, a portion of the quantity of the silicon flows in a direction away from the second layer toward the working surface.

### Claim 9 (depends on 1)

The method of claim 1, wherein during sintering, the silicon reacts with magnesium carbonate to form a material selected from the group consisting of MgSiO3, Mg2SiO4, and combinations thereof.

### Claim 10 (depends on 1)

The method of claim 1, wherein the sintering comprises sintering to a temperature greater than 1800° C. at a pressure equal to or greater than 65 kbar.

### Claim 11 (depends on 1)

The method of claim 1, wherein the silicon comprises about 0.5 wt % SiC based on the total weight of the first layer or the second layer.

### Claim 12 (depends on 1)

The method of claim 1, wherein the second layer comprises the silicon and the second layer is adjacent to the working surface.