Semiconductor laser device and laser light irradiation apparatus
AssigneeFurukawa Electric Co., Ltd.
InventorsYutaka Ohki, Kazuyuki Umeno, Ryuichiro Minato
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Abstract
A semiconductor laser device includes a semiconductor layer portion having an active layer and performs multi-mode oscillation of laser light. Further, the semiconductor layer portion includes first and second regions, the second region being located closer to a facet on a laser light radiation side than the first region, the first region and the second region include a stripe region in which the laser light is guided, and an optical confinement effect of the laser light to the stripe region in a horizontal direction in the second region is less than that in the first region.
Claims15
A semiconductor laser device comprising:
- a semiconductor layer portion having an active layer and performing multi-mode oscillation of laser light,
- wherein
- the semiconductor layer portion includes a first region and a second region, the second region being located closer to a facet on a laser light radiation side than the first region,
- the first region and the second region include a stripe region in which the laser light is guided,
- the stripe region has a width of 80 μm or more, the width being along a traversal direction orthogonal to a longitudinal direction of the stripe region,
- a second optical confinement effect of the laser light in the traversal direction to a second portion of the stripe region in the second region is less than a first optical confinement effect of the laser light in the traversal direction to a first portion of the stripe region in the first region,
- the semiconductor layer portion includes a current non-injection region, into which no current is injected, adjacent to the facet on the laser light radiation side, and
- a length of the current non-injection region along a laser light radiation direction is less than a length of the second region along the laser light radiation direction.
A semiconductor laser device comprising:
- a semiconductor layer portion having an active layer and performing multi-mode oscillation of laser light,
- wherein
- the semiconductor layer portion includes a first region and a second region, the second region being located closer to a facet on a laser light radiation side than the first region,
- the first region and the second region include a stripe region in which the laser light is guided,
- the stripe region has a width of 80 μm or more, the width being along a traversal direction orthogonal to a longitudinal direction of the stripe region,
- a second optical confinement effect of the laser light in the traversal direction to a second portion of the stripe region in the second region is less than a first optical confinement effect of the laser light in the traversal direction to a first portion of the stripe region in the first region, and
- the semiconductor layer portion includes a current non-injection region, into which no current is injected, adjacent to a facet opposite to the facet on the laser light radiation side.
Dependencies are inferred from the claim text.