US 10,439,038 B2Granted

Semiconductor device and electrical apparatus

AssigneesKabushiki Kaisha Toshiba, Toshiba Electronic Devices & Storage Corporation

InventorsTsuyoshi Oota, Hiroko Nonaka, Asami Gorohmaru, Toshiyuki Naka, Norio Yasuhara

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Abstract

According to an embodiment, a semiconductor device includes a first electrode, a first semiconductor region of a first conductivity type, second semiconductor regions of a second conductivity type, a third semiconductor region of the second conductivity type, a fourth semiconductor region of the first conductivity type, a fifth semiconductor region of the second conductivity type, a gate electrode, and a second electrode. The first semiconductor region is provided on the first electrode. The first semiconductor region includes first portions and first protruding portions. The first portions are arranged along a first direction and a second direction perpendicular to the first direction. The first protruding portions respectively protrude from the first portions. The second semiconductor regions are spaced from each other and provided in the first semiconductor region. The third semiconductor region is provided on the first semiconductor region and the second semiconductor regions.

Claims8

Dependent claims

A semiconductor device comprising:

a first electrode;
a first semiconductor region of a first conductivity type provided on the first electrode, the first semiconductor region including a plurality of first portions, the first portions being arranged along a first direction and a second direction perpendicular to the first direction;
a plurality of second semiconductor regions of a second conductivity type provided in the first semiconductor region other than the first portions and spaced from each other, part of the second semiconductor regions being provided around one of the first portions, and length of one of the second semiconductor regions in a direction from the part of the second semiconductor regions to the one of the first portions being longer than length of the one of the second semiconductor regions in a direction perpendicular to the direction;
a third semiconductor region of the second conductivity type provided on the first semiconductor region and the second semiconductor regions;
a fourth semiconductor re ion of the first conductivity type provided on the third semiconductor region;
a fifth semiconductor or region of the second conductivity type selectively provided on the fourth semiconductor region;
a gate electrode opposed to the fourth semiconductor region with a gate insulating layer interposed;
and
a second electrode provided on the fifth semiconductor region, wherein the part of the plurality of second semiconductor regions are radially arranged.

6 more elements

Dependencies are inferred from the claim text.

Facts

Application: 15/916,702Filed 9 Mar 2018 · continuation in part
Priority: JP 2017-0225699 Feb 2017
Published: US 2018/0226397 A19 Aug 2018
Granted: 8 Oct 2019
Term ends: Not estimatedThe source records don’t support an estimate.

Classification9 codes

H10D 12/038
Of vertical IGBTs: having a recessed gate, e.g. trench-gate IGBTs
H10D 12/461
Vertical IGBTs: having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions
H10D 12/481
Having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions: having gate…
H10D 62/142
Anode or cathode regions of thyristors; Collector or emitter regions of gated bipolar-mode devices, e.g. of IGBTs: anode regions of thyristors or…

Family

Application15/690,606Parent of this continuation-in-part · filed 30 Aug 2017
US 2018/0226487 A1Pre-grant publication · published 9 Aug 2018
US 10,438,946 B2Related patent
US 2018/0226397 A1Published application
US 10,439,038 B2This patent

From the US filing history. Foreign family members aren’t listed.