Light-emitting component, light-emitting device, and image forming apparatus

A light-emitting component comprising:

• a substrate;
• a light-emitting element disposed on the substrate;
• a thyristor that causes the light-emitting element to emit light or causes an amount of light emitted by the light-emitting element to increase, upon entering an on-state;
• and
• a light-transmission reduction layer that is disposed between the light-emitting element and the thyristor such that the light-emitting element and the thyristor are stacked and that suppresses light emitted by the thyristor from passing therethrough, wherein
• each of the light-emitting element and the thyristor includes a plurality of semiconductor layers that are stacked, and
• the light-transmission reduction layer includes a semiconductor layer having a conductivity type identical to a conductivity type of one of a light-emitting-element-side semiconductor layer that is in contact with the light-transmission reduction layer among the plurality of semiconductor layers of the light-emitting element and a thyristor-side semiconductor layer that is in contact with the light-transmission reduction layer among the plurality of semiconductor layers of the thyristor, and having an impurity concentration higher than an impurity concentration of the one of the light-emitting-element-side semiconductor layer and the thyristor-side semiconductor layer.

A light-emitting component comprising:

• a substrate;
• a light-emitting element disposed on the substrate;
• a thyristor that causes the light-emitting element to emit light or causes an amount of light emitted by the light-emitting element to increase, upon entering an on-state;
• and
• a light-transmission reduction layer that is disposed between the light-emitting element and the thyristor such that the light-emitting element and the thyristor are stacked and that suppresses light emitted by the thyristor from passing therethrough, wherein
• each of the light-emitting element and the thyristor includes a plurality of semiconductor layers that are stacked, and
• the light-transmission reduction layer is configured to maintain a direction in which a current easily flows in a case where a light-emitting-element-side semiconductor layer that is in contact with the light-transmission reduction layer among the plurality of semiconductor layers of the light-emitting element and a thyristor-side semiconductor layer that is in contact with the light-transmission reduction layer among the plurality of semiconductor layers of the thyristor are directly joined.

A light-emitting component comprising:

• a substrate;
• a light-emitting element disposed on the substrate;
• a thyristor that causes the light-emitting element to emit light or causes an amount of light emitted by the light-emitting element to increase, upon entering an on-state;
• and
• a light-transmission reduction layer that is disposed between the light-emitting element and the thyristor such that the light-emitting element and the thyristor are stacked and that suppresses light emitted by the thyristor from passing therethrough, wherein
• each of the light-emitting element, the thyristor, and the light-transmission reduction layer includes a plurality of semiconductor layers that are stacked,
• a semiconductor layer that is in contact with the light-transmission reduction layer among the plurality of semiconductor layers of the thyristor and a semiconductor layer that is in contact with the thyristor among the plurality of semiconductor layers of the light-transmission reduction layer have an identical conductivity type,
• a semiconductor layer that is in contact with the light-transmission reduction layer among the plurality of semiconductor layers of the light-emitting element and a semiconductor layer that in is in contact with the light-emitting element among the plurality of semiconductor layers of the light-transmission reduction layer have an identical conductivity type,
• the semiconductor layer that is in contact with the thyristor among the plurality of semiconductor layers of the light-transmission reduction layer has an impurity concentration higher than an impurity concentration of the semiconductor layer that is in contact with the light-transmission reduction layer among the plurality of semiconductor layers of the thyristor, and
• the semiconductor layer that in is in contact with the light-emitting element among the plurality of semiconductor layers of the light-transmission reduction layer has an impurity concentration higher than an impurity concentration of the semiconductor layer that is in contact with the light-transmission reduction layer among the plurality of semiconductor layers of the light-emitting element.

A light-emitting component comprising:

• a substrate;
• a plurality of light-emitting elements disposed on the substrate;
• a plurality of thyristors that are stacked on the plurality of light-emitting elements with a light-transmission reduction layer interposed therebetween, each of the plurality of thyristors being configured to cause a corresponding one of the plurality of light-emitting elements to emit light or cause an amount of light emitted by the corresponding one of the plurality of light-emitting elements to increase, upon entering an on-state;
• a plurality of transfer elements that are stacked on respective lower elements with a light-transmission reduction layer interposed therebetween, each of the plurality of transfer elements being configured to set, upon entering the on-state, a corresponding one of the thyristors to be ready to enter the on-state, the lower elements having a layered structure identical to a layered structure of the plurality of light-emitting elements;
• and
• a connection wire that causes the lower elements not to operate as the light-emitting elements.

A light-emitting component comprising:

• a light-emitting element that is disposed on a substrate;
• a driving element that is disposed on the light-emitting element and that drives the light-emitting element;
• and
• a light-transmission reduction layer that is disposed between the light-emitting element and the driving element, the light-transmission reduction layer being a semiconductor layer and being configured to suppress light from the driving element to the light-emitting element, wherein the light-transmission reduction layer is disposed on the light-emitting element and the driving element is disposed on the light-transmission reduction layer.