Semiconductor device, related manufacturing method, and related electronic device
AssigneesSemiconductor Manufacturing International (Shanghai) Corporation, Ningbo Semiconductor International Corporation
InventorsHerb He Huang, Clifford Ian Drowley, Hai Ting Li
Life of this patent
Estimating the term…
Abstract
A semiconductor device may include the following elements: a first substrate; a second substrate; a dielectric layer, which may be positioned between the first substrate and the second substrate and may have a hole; a first conductive member, which may be positioned in the dielectric layer; a second conductive member, which may be positioned in the dielectric layer, may be spaced from the first conductive member, and may be positioned closer to the second substrate than the first conductive member; and a third conductive member, which may contact both the first conductive member and the second conductive member through the hole.
Claims11
A method for manufacturing a semiconductor device, comprising:
- providing a first substrate;
- providing a second substrate;
- providing a first dielectric layer that overlaps the first substrate, wherein a first conductive member is positioned in the first dielectric layer, the first conductive member including:
- a conductive material portion, and
- a first etch-stop layer, formed over the conductive material portion by a conductive material different from the conductive material portion;
- providing a second dielectric layer that overlaps the second substrate, wherein a second conductive member is positioned in the second dielectric layer;
- bonding the first dielectric layer and the second dielectric layer to each other to form a combined dielectric layer;
- forming a hole in the combined dielectric layer, such that the hole exposes a portion of the first conductive member and exposes a portion of the second conductive member;
- and
- providing at least a conductive material in the hole to form a third conductive member, such that the third conductive member has a first side directly contacting a portion of a top surface of the first etch-stop layer of the first conductive member, has a second side directly contacting a portion of a top surface of the second conductive member, and has a third side directly contacting a sidewall of each of the first etch-stop layer and the conductive material portion of the first conductive member.
Dependencies are inferred from the claim text.