Method for manufacturing semiconductor substrate

A method for manufacturing a semiconductor substrate, the method comprising:

• implanting hydrogen ions at a predetermined depth from a surface of a first substrate comprising single crystal of a first semiconductor material to form a hydrogen layer;
• bonding the surface of the first substrate and a temporary substrate;
• separating the first substrate bonded to the temporary substrate with the hydrogen layer as a boundary to leave the separated surface side of the first substrate as a first thin film layer on the temporary substrate;
• forming a support layer comprising a second semiconductor material on the temporary substrate on which the first thin film layer is left;
• removing the temporary substrate to obtain a second substrate in which the first thin film layer is stacked on the support layer;
• cutting a peripheral edge portion in a predetermined range from an outer periphery of the second substrate;
• and
• epitaxially growing the first thin film layer in the second substrate such that a layer comprising the single crystal of the first semiconductor material is formed on the first thin film layer on a side opposite to the support layer,
• wherein the first substrate has a disk shape or a columnar shape, an outer shape of a surface of the temporary substrate bonded to the first substrate is equal to or larger than a diameter of the first substrate, and in the cutting, at least a portion exceeding the diameter of the first thin film layer is removed as the peripheral edge portion in the predetermined range.