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US 10,418,519 B2Granted
LED sidewall processing to mitigate non-radiative recombination
AssigneeApple Inc.
InventorsDavid P. Bour, Dmitry S. Sizov, Daniel A. Haeger, Xiaobin Xin
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Abstract
LEDs and methods of forming LEDs with various structural configurations to mitigate non-radiative recombination at the LED sidewalls are described. The various configurations described include combinations of LED sidewall surface diffusion with pillar structure, modulated doping profiles to form an n-p superlattice along the LED sidewalls, and selectively etched cladding layers to create entry points for shallow doping or regrowth layers.
Claims14
A light emitting structure comprising:
- a body including:
- a first cladding layer doped with a first dopant type;
- a barrier layer;
- and
- an active layer between the first cladding layer and the barrier layer;
- a pillar structure that protrudes from a first surface of the body, wherein the pillar structure includes a second cladding layer doped with a second dopant type opposite the first dopant type;
- and
- a confinement region including a dopant concentration spanning sidewalls of the body and the first surface of the body, wherein the dopant concentration is formed of the second dopant type and encroaches from the sidewalls of the body toward a center vertical axis of the light emitting structure and from the first surface of the body toward the active layer, and the dopant concentration laterally encroaches toward a center vertical axis of the light emitting structure within the body past sidewalls of the pillar structure.
5 more elements
Dependencies are inferred from the claim text.