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AssigneesArizona Board of Regents on behalf of Arizona State University, The Regents of the University of California
InventorsSrabanti Chowdhury, Maitreya Dutta, Robert Nemanich, Franz Koeck
Estimating the term…
A semiconductor structure, device, or vertical field effect transistor is comprised of a drain, a drift layer disposed in a first direction relative to the drain and in electronic communication with the drain, a barrier layer disposed in the first direction relative to the drift layer and in electronic communication with the drain, the barrier layer comprising a current blocking layer and an aperture region, a two-dimensional hole gas-containing layer disposed in the first direction relative to the barrier layer, a gate electrode oriented to alter an energy level of the aperture region when a gate voltage is applied to the gate electrode, and a source in ohmic contact with the two-dimensional hole gas-containing layer. At least one of an additional layer, the drain, the drift region, the current blocking layer, the two-dimensional hole gas-containing layer, and the aperture region comprises diamond.
A vertical field effect transistor comprising:
Dependencies are inferred from the claim text.