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US 10,418,471 B2Granted
Field plates on two opposed surfaces of double-base bidirectional bipolar transistor: devices, methods, and systems
AssigneeIdeal Power Inc.
InventorsWilliam C. Alexander, Richard A. Blanchard
Life of this patent
Estimating the term…
Abstract
Dual-base two-sided bipolar power transistors which use an insulated field plate to separate the emitter/collector diffusions from the nearest base contact diffusion. This provides a surprising improvement in turn-off performance, and in breakdown voltage.
Claims14
A power semiconductor device, comprising:
- first and second first-conductivity-type emitter/collector regions, located respectively on first and second surfaces of a second-conductivity-type semiconductor die;
- first and second second-conductivity-type base contact regions, located respectively on the first and second surface of the semiconductor die;
- first and second insulated field plate structures, located respectively on the first and second surface of the semiconductor die;
- wherein the field plate structures are conductive, and are vertically extended, and laterally adjoin the emitter/collector regions;
- wherein the first emitter/collector region is generally shaped like a stripe with sides and ends, and is laterally surrounded by the first insulated field plate structure at both sides and both ends, and is electrically connected to the first insulated field plate structure through a first conductive electrode;
- and wherein the second emitter/collector region is generally shaped like a stripe with sides and ends, and is laterally surrounded by the second insulated field plate structure at both sides and both ends, and is electrically connected to the second insulated field plate structure through a second conductive electrode;
- whereby the breakdown voltage is improved under either polarity of applied voltage.
4 more elements
A power semiconductor device, comprising:
- a p-type semiconductor die having first and second surfaces;
- first and second n-type emitter/collector regions, located respectively on the first and second surface of the semiconductor die;
- first and second p-type base contact regions, located respectively on the first and second surface of the semiconductor die;
- first and second trenched field plate structures, located respectively on the first and second surface of the semiconductor die;
- wherein the first emitter/collector region is electrically connected through a first conductive electrode to, and is entirely surrounded by, the first trenched field plate structure;
- and wherein the second emitter/collector region is electrically connected through a second conductive electrode to, and is entirely surrounded by, the second trenched field plate structure;
- whereby the breakdown voltage is improved under either polarity of applied voltage.
4 more elements
A power semiconductor device, comprising:
- an n-type semiconductor die having first and second surfaces;
- first and second p-type emitter/collector regions, located respectively on the first and second surface of the semiconductor die;
- first and second n-type base contact regions, located respectively on the first and second surface of the semiconductor die;
- first and second trenched field plate structures, located respectively on the first and second surface of the semiconductor die;
- wherein the first emitter/collector region is electrically connected through a first conductive electrode to, and is entirely surrounded by, the first trenched field plate structure;
- and wherein the second emitter/collector region is electrically connected through a second conductive electrode to, and is entirely surrounded by, the second trenched field plate structure;
- whereby the breakdown voltage is improved under either polarity of applied voltage.
4 more elements
Dependencies are inferred from the claim text.