Illumination system and metrology system
AssigneeASML Netherlands B.V.
InventorsJohannes Matheus Marie De Wit, Kim Gerard Feijen, Anko Jozef Cornelus Sijben, Martinus Maassen, Henricus Martinus Johannes Van De Groes
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Abstract
Disclosed is an illumination system for a metrology apparatus and a metrology apparatus comprising such an illumination system. The illumination system comprises an illumination source; and a linear variable filter arrangement configured to filter a radiation beam from said illumination source and comprising one or more linear variable filters. The illumination system is operable to enable selective control of a wavelength characteristic of the radiation beam subsequent to it being filtered by the linear variable filter arrangement.
Claims13
A system for measuring one or more characteristics of a target on a substrate formed by a lithographic process so that a parameter of the lithographic process can be determined, comprising:
- an illumination source configured to output a radiation beam;
- a linear variable filter arrangement, configured to filter the radiation beam from the illumination source, and comprising one or more linear variable filters;
- a support configured to support the substrate having the target formed thereon;
- beam directing optics configured to be selectively controlled to control a wavelength characteristic of the radiation beam subsequent to it being filtered by the linear variable filter arrangement to thereby direct the wavelength controlled radiation beam toward the target;
- and
- a scatterometry system configured to receive the wavelength controlled radiation beam interacting with the target,
- wherein the scatterometry system is configured to measure one or more of intensity and polarization of a portion of the received wavelength controlled radiation beam so the parameter of the lithographic process can be determined, and
- wherein the selective control comprises a control of the spatial position of the radiation beam on the one or more linear variable filters.
A system for measuring one or more characteristics of a target on a substrate formed by a lithographic process so that a parameter of the lithographic process can be determined, comprising:
- an illumination source configured to output a radiation beam;
- a linear variable filter arrangement, configured to filter the radiation beam from the illumination source, and comprising one or more linear variable filters;
- a support configured to support the substrate having the target formed thereon;
- beam directing optics configured to be selectively controlled to control a wavelength characteristic of the radiation beam subsequent to it being filtered by the linear variable filter arrangement to thereby direct the wavelength controlled radiation beam toward the target and
- a scatterometry system configured to receive the wavelength controlled radiation beam interacting with the target,
- wherein the scatterometry system is configured to measure one or more of intensity and polarization of a portion of the received wavelength controlled radiation beam so the parameter of the lithographic process can be determined, and
- wherein the selective control is implemented by providing for controllable relative movement between the radiation beam and the one or more linear variable filters.
A system for measuring one or more characteristics of a target on a substrate formed by a lithographic process so that a parameter of the lithographic process can be determined, comprising:
- an illumination source configured to output a radiation beam;
- a linear variable filter arrangement, configured to filter the radiation beam from the illumination source, and comprising one or more linear variable filters;
- a support configured to support the substrate having the target formed thereon;
- beam directing optics configured to be selectively controlled to control a wavelength characteristic of the radiation beam subsequent to it being filtered by the linear variable filter arrangement to thereby direct the wavelength controlled radiation beam toward the target;
- and
- a scatterometry system configured to receive the wavelength controlled radiation beam interacting with the target,
- wherein the scatterometry system is configured to measure one or more of intensity and polarization of a portion of the received wavelength controlled radiation beam so the parameter of the lithographic process can be determined, and
- wherein the beam directing optics are controllable to selectively direct the radiation beam to different spatial positions on the one or more linear variable filters of the linear variable filter arrangement.
A system for measuring one or more characteristics of a target on a substrate formed by a lithographic process so that a parameter of the lithographic process can be determined, comprising:
- an illumination source configured to output a radiation beam;
- a linear variable filter arrangement, configured to filter the radiation beam from the illumination source, and comprising one or more linear variable filters;
- a support configured to support the substrate having the target formed thereon;
- beam directing optics configured to be selectively controlled to control a wavelength characteristic of the radiation beam subsequent to it being filtered by the linear variable filter arrangement to thereby direct the wavelength controlled radiation beam toward the target;
- and
- a scatterometry system configured to receive the wavelength controlled radiation beam interacting with the target,
- wherein the scatterometry system is configured to measure one or more of intensity and polarization of a portion of the received wavelength controlled radiation beam so the parameter of the lithographic process can be determined, and
- wherein the beam directing optics are controllable to selectively direct the radiation beam along alternative predetermined paths, each path comprising different ones of the linear variable filter arrangement.
Dependencies are inferred from the claim text.