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US 10,410,945 B2Granted
Semiconductor device
AssigneeHitachi, Ltd.
InventorAkitoyo Konno
Life of this patent
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Abstract
Provided is a semiconductor device with high reliability. In order to solve the above problems, according to the present invention, the semiconductor device includes a heat dissipating substrate, an insulating substrate arranged on the heat dissipating substrate and having a wiring layer, a plurality of semiconductor elements arranged on the insulating substrate, a conductive block electrically connected to a front surface electrode of the semiconductor element, and a terminal electrode, in which the conductive block has a convex portion, and the convex portion is bonded to the insulating substrate.
Claims14
A semiconductor device comprising:
- a terminal electrode;
- a heat dissipating substrate;
- an insulating substrate arranged on the heat dissipating substrate and including a wiring layer;
- a plurality of semiconductor switching elements arranged on the insulating substrate;
- and
- a conductive block electrically connected to a front surface electrode of the semiconductor switching element,
- wherein the conductive block has a convex portion,
- wherein the convex portion is bonded to the insulating substrate,
- wherein the conductive block is bonded to each of the plurality of semiconductor switching elements, and
- wherein the plurality of semiconductor switching elements are arranged to be substantially equally spaced with respect to a bonding portion between the convex portion of the conductive block and the terminal electrode.
7 more elements
Dependencies are inferred from the claim text.