Cost-efficient high power PECVD deposition apparatus for solar cells

A plasma enhanced chemical vapor deposition (PECVD) system, comprising:

• a vacuum chamber having a single electrode positioned over a platform, the vacuum chamber being configured to receive a substrate for forming a photovoltaic device;
• a first power generator configured to generate an electric field in the vacuum chamber for performing a high power PECVD flash deposition for depositing a first portion of a layer on the substrate, the layer being included in one or more layers of a photovoltaic stack;
• and
• a second power generator configured to generate an electric field in the vacuum chamber for performing a low power PECVD deposition for depositing a second portion of the layer on the substrate, wherein the first power generator and the second power generator are each separately connected to the single electrode at opposing ends of the single electrode in the vacuum chamber and configured to provide a buffer layer of a photovoltaic stack including germanium containing material layers directly on a transparent electrode and between said transparent electrode of zinc oxide and a p-type layer of hydrogenated silicon carbide of said photovoltaic stack, wherein the buffer layer is a single material layer of silicon germanium that is in direct contact with both the transparent electrode and the p-type layer of the photovoltaic stack, wherein the high power PECVD flash deposition forms a first portion of the germanium containing material layers having an increasing crystallinity with increasing depth;
• and the low power PECVD deposition forms a second portion of the germanium containing material layers that is amorphous to provide the single material layer for the buffer layer having a varying crystal structure having said first portion with said increasing crystallinity with said increasing depth and said second portion being said amorphous, wherein the increasing crystallinity is in a direction towards the p-type layer of hydrogenated silicon carbide to provide for alignment of a conduction band of the buffer layer and the p-type layer of hydrogenated silicon carbide to reduce a Schottky barrier between the buffer layer and the p-type layer of hydrogenated silicon carbide such that an intrinsic layer of amorphous silicon is formed on the p-type layer of hydrogenated silicon carbide and an n-type silicon layer to provide a PIN junction.