Methods and system for processing semiconductor device structures
AssigneeMicron Technology, Inc.
InventorsAndrew M. Bayless, Joseph M. Brand
Life of this patent
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Abstract
Methods of detaching semiconductor device structures from carrier structures may involve directing a laser through a carrier structure comprising a semiconductor material to a barrier material located between the carrier structure and a semiconductor device structure adhere to an opposite side of the barrier material. A bond between the carrier structure and an adhesive material temporarily securing the carrier structure to the semiconductor device structure may be released in response to heating of the barrier material by the laser beam. The carrier structure may be removed from the semiconductor device structure, the barrier material removed, and an adhesive bonding the semiconductor device structure to the barrier material removed.
Claims21
A method of processing a semiconductor device, the method comprising:
- directing a laser beam through a carrier structure to heat a barrier material located between the carrier structure and a semiconductor device structure on an opposite side of the barrier material;
- releasing a bond between the carrier structure and an adhesive material securing the carrier structure to the barrier material responsive to the heat, the adhesive material comprising a thermoset material;
- leaving the barrier material intact and leaving a temporary attachment between the barrier material, another adhesive material securing the semiconductor device structure to the barrier material, and the semiconductor device structure intact, the another adhesive material comprising a thermoplastic material;
- and
- removing the carrier structure from the barrier material.
A method of processing a semiconductor device structure, comprising:
- securing a carrier structure to a semiconductor device structure with a first adhesive material comprising a thermoset material in contact with the carrier structure, a barrier material located on a side of the first adhesive material opposite the carrier structure, and a second adhesive material comprising a thermoplastic material located between the barrier material and the semiconductor device structure;
- securing a support structure to the semiconductor device structure on a side of the semiconductor device structure opposite the carrier structure;
- directing a laser beam through the first adhesive material of the carrier structure to impinge on the barrier material;
- releasing a bond between the carrier structure and the first adhesive material responsive to heating of the barrier material by the laser beam;
- leaving the barrier material intact and leaving a temporary attachment between the barrier material, the second adhesive material, and the semiconductor device structure intact;
- and
- removing the carrier structure from the semiconductor device structure.
Dependencies are inferred from the claim text.