Extreme ultraviolet photoresist and method
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsYen-Hao Chen, Wei-Han Lai, Chien-Wei Wang, Chin-Hsiang Lin
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Abstract
Resist materials having enhanced sensitivity to radiation are disclosed herein, along with methods for lithography patterning that implement such resist materials. An exemplary resist material includes a polymer, a sensitizer, and a photo-acid generator (PAG). The sensitizer is configured to generate a secondary radiation in response to the radiation. The PAG is configured to generate acid in response to the radiation and the secondary radiation. The PAG includes a sulfonium cation having a first phenyl ring and a second phenyl ring, where the first phenyl ring is chemically bonded to the second phenyl ring.
Claims20
A resist material with enhanced sensitivity to radiation, the resist material comprising:
- a polymer;
- a sensitizer;
- and
- a photo-acid generator (PAG) that includes a cation and an anion, wherein the cation of the PAG includes a sulfur chemically bonded to a first phenyl ring and a second phenyl ring, and further wherein the cation of the PAG further includes an additional chemical group chemically bonded to the first phenyl ring and the second phenyl ring.
A resist material with enhanced sensitivity to radiation, the resist material comprising:
- a polymer;
- a sensitizer configured to generate an electron directly from the sensitizer in response to the radiation;
- and
- a photo-acid generator (PAG) configured to generate acid in response to the electron, wherein the PAG includes a sulfonium cation having a first phenyl ring and a second phenyl ring bonded to a sulfonium sulfur, wherein the first phenyl ring is further connected to the second phenyl ring through a chemical group separate from the sulfonium sulfur.
A resist material with enhanced sensitivity to extreme ultraviolet (EUV) radiation, the resist material comprising:
- a polymer, wherein the polymer includes a poly(norbornene)-co-malaic anhydride (COMA) polymer, a polyhydroxystyrene (PHS) polymer, or an acrylate-based polymer;
- a sensitizer configured to generate electrons upon absorbing the EUV radiation, wherein the sensitizer includes PHS, poly-fluorostyrene, or poly-chlorostyrene;
- and
- a photo-acid generator (PAG) configured to generate acid upon absorbing the electrons, wherein the PAG includes a triphenylsulfonium-based cation that includes a first phenyl ring connected to a second phenyl ring.
Dependencies are inferred from the claim text.