Interconnect structures for assembly of semiconductor structures including superconducting integrated circuits

A multi-layer semiconductor structure, comprising:

• a first semiconductor structure having first and second opposing surfaces and including one or more interconnect pads disposed on at least one of the first and second surfaces;
• a second semiconductor structure having first and second opposing surfaces and including one or more interconnect pads disposed on at least one of the first and second surfaces, wherein at least one of the first and second semiconductor structures is a superconducting semiconductor structure;
• and
• one or more interconnect structures, each of the interconnect structures disposed between the first and second semiconductor structures and coupled to respective ones of the interconnect pads provided on the first and second semiconductor structures, and each of the interconnect structures including a plurality of interconnect sections, wherein at least one of the interconnect sections includes at least one superconducting and/or a partially superconducting material;
• wherein each of the interconnect structures has first and second opposing portions and includes:
• a first interconnect section having first and second opposing portions, wherein the first portion of the first interconnect section corresponds to the first portion of the interconnect structure;
• a second interconnect section having first and second opposing portions, wherein the first portion of the second interconnect section is disposed over the second portion of the first interconnect section;
• and
• a third interconnect section having first and second opposing portions, wherein the first portion of the third interconnect section is disposed over the second portion of the second interconnect section, and the second portion of the third interconnect section corresponds to the second portion of the interconnect structure;
• wherein the first interconnect section includes a plurality of conductive layers, and each of the conductive layers includes a different, respective metal or alloy material or combination of materials;
• and
• wherein the third interconnect section includes a plurality of conductive layers, and each of the conductive layers includes a different, respective metal or alloy material or combination of materials;
• wherein each of the conductive layers has a different, respective melting point;
• wherein:
• the first interconnect section of the first semiconductor structure consists of a first superconducting layer, a second superconducting layer disposed on the first superconducting layer, and a third conductive layer disposed on the second superconducting layer,
• the second interconnect section of the first semiconductor structure consists of a superconducting bump disposed on the third layer of the first interconnect section;
• and
• the third interconnect section of the first semiconductor structure consists of a fourth superconducting layer, a fifth superconducting layer disposed on the fourth superconducting layer, and a sixth conductive layer disposed on the fifth superconducting layer;
• wherein at least one of the first, second, and third interconnect sections comprise an interface with a second one of the first, second, and third interconnect sections corresponding to a multi-melt interface that includes at least one superconducting and/or a partially superconducting material.