Lateral growth of edge-emitting lasers
AssigneeInternational Business Machines Corporation
InventorsEffendi Leobandung, Ning Li, Tak H. Ning
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Abstract
A method of forming a pair of edge-emitting lasers is provided. The method includes forming a mesa from a substrate, forming a cover layer on the substrate around the mesa, and forming a first barrier layer on each of opposite sidewalls of the mesa. The method further includes forming a quantum well layer on each of the barrier layers, forming a second barrier layer on each of the quantum well layers, and forming a cladding layer on each of the second barrier layers.
Claims20
A method of forming a pair of edge-emitting lasers, comprising:
- forming a mesa from a substrate, wherein the mesa has essentially straight sidewalls with a predetermined crystal face;
- forming a cover layer on the substrate around the mesa;
- forming a first barrier layer directly on and laterally from each of opposite sidewalls of the mesa;
- forming a quantum well layer on each of the barrier layers;
- forming a second barrier layer on each of the quantum well layers;
- and
- forming a cladding layer on each of the second barrier layers.
A method of forming a pair of edge-emitting lasers, comprising:
- forming a mesa from a substrate, wherein the mesa has essentially straight sidewalls with a predetermined crystal face;
- doping the mesa with an n-type or a p-type dopant;
- forming a cover layer on the substrate around the mesa;
- forming a first barrier layer directly on each of opposite sidewalls of the mesa, wherein the first barrier layers are formed by lateral heteroepitaxial growth from opposite sidewalls of the mesa;
- forming a quantum well layer on each of the barrier layers;
- and
- forming a second barrier layer on each of the quantum well layers.
A pair of edge-emitting lasers, comprising:
- a doped mesa extended from a substrate, wherein the mesa has essentially straight sidewalls with a predetermined crystal face, and wherein the doped mesa forms part of a waveguide for the pair of edge-emitting lasers;
- a cover layer on the substrate around the doped mesa;
- a first barrier layer directly on each of opposite sidewalls of the doped mesa;
- a quantum well layer on each of the barrier layers;
- and
- a second barrier layer on each of the quantum well layers.
Dependencies are inferred from the claim text.