Semiconductor chip and method for producing a semiconductor chip

A semiconductor chip, having a first semiconductor layer, which has a lateral variation of a material composition along at least one direction of extent,

• wherein the first semiconductor layer has a constant thickness,
• wherein
• the first semiconductor layer has at least one first region and, laterally adjacent thereto, at least one second region,
• the at least one first region and the at least one second region have a same material system, and
• a material composition of each first region is different from a material composition of its laterally adjacent second region, wherein each first region and its laterally adjacent second region have a same thickness,
• wherein
• the semiconductor chip is embodied as a light-emitting diode chip, and has at least one contact layer embodied, at least partly, as a bond pad, and
• each second region is arranged beneath a corresponding bond pad, and
• wherein
• the at least one contact layer has current-carrying ridges, and
• each second region is formed beneath corresponding current-carrying ridges.