Scintillator, scintillator panel, radiation detector and method of manufacturing scintillator
AssigneeCanon Electron Tubes & Devices Co., Ltd.
InventorsAtsuya Yoshida, Hiroshi Horiuchi
Life of this patent
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Abstract
According to one embodiment, a scintillator includes a first layer provided on a surface of a substrate and including thallium activated cesium iodide; and a second layer provided on the first layer and including thallium activated cesium iodide. The second layer includes crystals having a [001] orientation partially diverted from a direction perpendicular to the surface of the substrate. Half width at half maximum of a frequency distribution curve of an angle between the direction perpendicular to the surface of the substrate and the [001] orientation, which is obtained by measuring the angle using EBSD method, is 2.4 degree or less.
Claims15
A scintillator, comprising:
- a first layer provided on a surface of a substrate and including thallium activated cesium iodide;
- and
- a second layer provided on the first layer and including thallium activated cesium iodide, the second layer including crystals having a [001] orientation partially diverted from a direction perpendicular to the surface of the substrate,
- wherein half width at half maximum of a frequency distribution curve of an angle between the direction perpendicular to the surface of the substrate and the [001] orientation, which is obtained by measuring the angle using EBSD method, is 2.4 degree or less.
A scintillator panel, comprising:
- a substrate being transmissive for radiation;
- and
- a scintillator provided on the substrate,
- wherein:
- the scintillator comprises:
- a first layer provided on a surface of the substrate and including thallium activated cesium iodide, and
- a second layer provided on the first layer and including thallium activated cesium iodide, the second layer including crystals having a [001] orientation partially diverted from a direction perpendicular to the surface of the substrate;
- and
- half width at half maximum of a frequency distribution curve of an angle between the direction perpendicular to the surface of the substrate and the [001] orientation, which is obtained by measuring the angle using EBSD method, is 2.4 degree or less.
Dependencies are inferred from the claim text.