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US 10,382,002 B2Granted
Apparatus and methods for tunable phase networks
AssigneeTDK Corporation
InventorChris Levesque
Life of this patent
Estimating the term…
Abstract
A radio frequency system is described. A radio frequency system including at least a first tunable phasing network including at least one first set of metal oxide semiconductor variable capacitor arrays. The first tunable phasing network is configured to shift a phase of a radio frequency signal. And, at least a first switch coupled with the first tunable phasing network. The first switched configured to switch between one or more receiver circuits.
Claims20
A radio frequency system comprising:
- a semiconductor chip including:
- at least a first tunable phasing network including at least one first set of metal oxide semiconductor variable capacitor arrays including anti-series metal oxide semiconductor capacitors each anti-series metal oxide semiconductor capacitor including at least a first transistor and a second transistor, the first transistor including a first transistor gate, a first transistor source, and a first transistor drain, the second transistor including a second transistor gate, a second transistor source, and a second transistor drain, the first gate of the first transistor and the second gate of the second transistor are electrically coupled, said first tunable phasing network configured to shift a phase of a radio frequency signal;
- and
- at least a first silicon on insulator switch coupled with said first tunable phasing network, said first silicon on insulator switch configured to switch between one or more receiver circuits.
1 more element
A semiconductor for a radio frequency system comprising:
- a plurality of phasing networks, each of said plurality of phasing networks including at least one first set of metal oxide semiconductor variable capacitor arrays including anti-series metal oxide semiconductor capacitors each anti-series metal oxide semiconductor capacitor including at least a first transistor and a second transistor, the first transistor including a first transistor gate, a first transistor source, and a first transistor drain, the second transistor including a second transistor gate, a second transistor source, and a second transistor drain, the first gate of the first transistor and the second gate of the second transistor are electrically coupled, at least a first tunable phasing network of said plurality of phasing networks configured to shift a phase of a radio frequency signal;
- and
- a plurality of silicon on insulator switches, at least a first silicon on insulator switch of said plurality of silicon on insulator switches coupled with said first tunable phasing network, said first silicon on insulator switch configured to switch between one or more receiver circuits.
A radio-frequency system comprising:
- a semiconductor chip including:
- a means for shifting a phase of a radio frequency signal including at least one first set of metal oxide semiconductor variable capacitor arrays including anti-series metal oxide semiconductor capacitors each anti-series metal oxide semiconductor capacitor including at least a first transistor and a second transistor, the first transistor including a first transistor gate, a first transistor source, and a first transistor drain, the second transistor including a second transistor gate, a second transistor source, and a second transistor drain, the first gate of the first transistor and the second gate of the second transistor are electrically coupled;
- and
- a means for switching between one or more receiver circuits coupled with said first tunable phasing network formed on a silicon on insulator substrate.
1 more element
Dependencies are inferred from the claim text.